[1] |
Hacker J, Urteaga M, Mensa D, Pierson R, Jones M, Griffith Z and Rodwell M 2008 IEEE MTT-S Int. Dig. Atlanta, USA, June 15--20, 2008 p. 403
|
[2] |
Griffith Z, Urteaga M, Pierson R, Patane A, Rodwell P, Rodwell M and Brar B 2010 IEEE Compound Semiconductor Integrated Circuit Symposium Costa Mesa, USA, October 3--6, 2010 p. 1
|
[3] |
Rodwell M J W, Urteaga M, Mathew T, Scott D, Mensa D, Lee Q, Guthrie J, Betser Y, Martin S C, Smith R P, Jaganathan S, Krishnan S, Long S I, Pullela R, Agarwal B, Bhattacharya U, Samoska L and Dahlstrom M 2001 IEEE Trans. Electron Devices 48 2606
|
[4] |
Ishibashi T 2001 IEEE Trans. Electron Devices 48 2595
|
[5] |
Kazutaka T 1993 Numerical Simulation of Submicron Semiconductor Devices 1st ed (Norwood:Artech House)
|
[6] |
Jin Z, Su Y B, Cheng W, Liu X Y, Xu A H and Qi M 2009 Chin. Phys. Lett. 25 2686
|
[7] |
Caughey D M and Thomas R E 1967 Proc. IEEE 55 2192
|
[8] |
Lv H L, Zhang Y M and Zhang Y M 2004 Chin. Phys. 13 1100
|
[9] |
Li J C, Sokolich M, Hussain T and Asbeck P M 2006 Solid-State Electronics 50 1440
|
[10] |
Tauqeer T, Sexton J, Amir F and Missous M 2008 International Conference on Advanced Semiconductor Devices and Microsystems Smolenice, Slovakia, October 12--16, 2008 p. 271
|
[11] |
Lopez-Gonzalez J M and Part L 1997 IEEE Trans. Electron Devices 44 1046
|
[12] |
Ruiz-Palmero J M, Hammer U and Jackel H 2006 Solid-State Electronics 50 1595
|
[13] |
Ge J, Jin Z, Su Y B, Cheng W, Liu X Y and Wu D X 2009 Acta Phys. Sin. 58 8584 (in Chinese)
|
[14] |
Blayac S, Benchimol J L, Abboun M, Aniel F, Berdaguer P, Duchenois A M, Konczykowska and Godin J 1999 11th International Conference on Indium Phosphide and Related Materials Davos, Switzerland May 16--20, 1999 p. 483
|
[15] |
Guo B Z, Zhang S L and Liu X 2011 Acta Phys. Sin. 60 068701 (in Chinese)
|
[16] |
Kahn M, Blayac S, Riet M, Berdagaguer P, Dhalluim, Alexandre F and Godin J 2003 IEEE Electron Dev. Lett. 24 430
|
[17] |
Willen B, Westergren U and Asonen H 1995 IEEE Electron Dev. Lett. 16 479
|
[18] |
Kurishima K, Nakajima H, Kobayashi T, Matsuoka Y and Ishibashi T 1993 Electronics Lett. 29 258
|
[19] |
Ida M, Kurishima K, Ishii K and Watanabe N 2003 Gallium Arsenide Integeated Circuit Symposium:Technical Digest San Diego, California November 9--12, 2003 p. 211
|
[20] |
Ida M, Kurishima K, Watanabe N and Enoki T 2001 Electron Devices Meeting Washington, D. C. December 2--5, 2001 p. 35.4.1
|