Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor

doi:10.1088/1674-1056/21/3/037305

中国物理B ›› 2012, Vol. 21 ›› Issue (3): 37305-037305.doi: 10.1088/1674-1056/21/3/037305

庄翔,乔明,张波,李肇基

收稿日期:2011-07-24 修回日期:2011-10-08 出版日期:2012-02-15 发布日期:2012-02-15
通讯作者: 庄翔,zhuangxiang19861226@126.com E-mail:zhuangxiang19861226@126.com

Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor

Zhuang Xiang(庄翔)^†, Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2011-07-24 Revised:2011-10-08 Online:2012-02-15 Published:2012-02-15
Contact: Zhuang Xiang,zhuangxiang19861226@126.com E-mail:zhuangxiang19861226@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60906038).

摘要/Abstract

Abstract: This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel lateral double-di?used metal oxide semiconductor (LDMOS). Compared with the conventional simulation method, the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit. The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method. Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer, 50-μm-length drift region, and at -400 V back-gate voltage, enabling the device to be used in a 400 V UHV integrated circuit.

Key words: silicon on insulator, breakdown voltage, back-gate voltage, lateral double-diffused metal oxide semiconductor

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures) 73.61.Ng (Insulators)

庄翔, 乔明, 张波, 李肇基. [J]. 中国物理B, 2012, 21(3): 37305-037305.

Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) . Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor[J]. Chin. Phys. B, 2012, 21(3): 37305-037305.

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Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diﬀused metal oxide semiconductor

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