Nonlinear dynamics in wurtzite InN diodes under terahertz radiation

doi:10.1088/1674-1056/21/3/037306

摘要/Abstract

Abstract: We carry out a theoretical study of nonlinear dynamics in terahertz-driven n⁺nn⁺ wurtzite InN diodes by using time-dependent drift diffusion equations. A cooperative nonlinear oscillatory mode appears due to the negative differential mobility effect, which is the unique feature of wurtzite InN aroused by its strong nonparabolicity of the $\varGamma_1$ valley. The appearance of different nonlinear oscillatory modes, including periodic and chaotic states, is attributed to the competition between the self-sustained oscillation and the external driving oscillation. The transitions between the periodic and chaotic states are carefully investigated using chaos-detecting methods, such as the bifurcation diagram, the Fourier spectrum and the first return map. The resulting bifurcation diagram displays an interesting and complex transition picture with the driving amplitude as the control parameter.

Key words: nonlinear dynamics, terahertz radiation, wurtzite InN

中图分类号: (III-V semiconductors)

73.61.Ey

73.50.Fq (High-field and nonlinear effects) 85.30.Fg (Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)) 85.30.De (Semiconductor-device characterization, design, and modeling)

冯伟. [J]. 中国物理B, 2012, 21(3): 37306-037306.

Feng Wei(冯伟) . Nonlinear dynamics in wurtzite InN diodes under terahertz radiation[J]. Chin. Phys. B, 2012, 21(3): 37306-037306.

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