Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

doi:10.1088/1674-1056/21/1/017303

中国物理B ›› 2012, Vol. 21 ›› Issue (1): 17303-017303.doi: 10.1088/1674-1056/21/1/017303

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

曹琳, 蒲红斌, 陈治明, 臧源

Department of Electronic Engineering, Xián University of Technology, Xián 710048, China

收稿日期:2011-03-24 修回日期:2011-05-05 出版日期:2012-01-15 发布日期:2012-01-20
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60876050) and the Research Fund for Excellent Doctor Degree Thesis of Xi’an University of Technology, China.

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

Cao Lin(曹琳)^†, Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源)

Department of Electronic Engineering, Xián University of Technology, Xián 710048, China

Received:2011-03-24 Revised:2011-05-05 Online:2012-01-15 Published:2012-01-20
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60876050) and the Research Fund for Excellent Doctor Degree Thesis of Xi’an University of Technology, China.

摘要/Abstract

摘要： In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

关键词: 4H-SiC, semi-superjunction, Schottky barrier diode, softness factor

Abstract: In this paper, a 4H-SiC semi-superjunction (SJ) Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

Key words: 4H-SiC, semi-superjunction, Schottky barrier diode, softness factor

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

73.40.Sx (Metal-semiconductor-metal structures)

曹琳, 蒲红斌, 陈治明, 臧源. Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery[J]. 中国物理B, 2012, 21(1): 17303-017303.

Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) . Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery[J]. Chin. Phys. B, 2012, 21(1): 17303-017303.

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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery

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