Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

doi:10.1088/1674-1056/20/12/126801

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 126801-126801.doi: 10.1088/1674-1056/20/12/126801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

胡炜玄, 成步文, 薛春来, 苏少坚, 王启明

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2011-02-17 修回日期:2011-06-20 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the Major State Basic Research Program of China (Grant No. 2007CB613404), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Natural Science Foundation of China (Grant Nos. 60676005, 61036003, and 60906035), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01).

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文)^†, Xue Chun-Lai(薛春来), Su Shao-Jian(苏少坚), and Wang Qi-Ming(王启明)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-02-17 Revised:2011-06-20 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the Major State Basic Research Program of China (Grant No. 2007CB613404), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Natural Science Foundation of China (Grant Nos. 60676005, 61036003, and 60906035), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01).

摘要/Abstract

摘要： The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature T_g are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with T_g increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at T_g = 700 ℃, 730 ℃, and 800 ℃, but disappear when T_g = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.

Abstract: The Si epitaxial films are grown on Si (100) substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature T_g are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with T_g increasing from 650 ℃ to 700 ℃. Rippled surface morphologies are observed at T_g = 700 ℃, 730 ℃, and 800 ℃, but disappear when T_g = 750 ℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.

Key words: step-bunching, Ehrlich-Chwoebel barrier, elastic repulsion, fluctuation

中图分类号: (Thin film structure and morphology)

68.55.-a

81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)

胡炜玄, 成步文, 薛春来, 苏少坚, 王启明. Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. 中国物理B, 2011, 20(12): 126801-126801.

Hu Wei-Xuan(胡炜玄), Cheng Bu-Wen(成步文), Xue Chun-Lai(薛春来), Su Shao-Jian(苏少坚), and Wang Qi-Ming(王启明) . Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. Chin. Phys. B, 2011, 20(12): 126801-126801.

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Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition

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