中国物理B ›› 2021, Vol. 30 ›› Issue (2): 28504-0.doi: 10.1088/1674-1056/abc152

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  • 收稿日期:2020-07-19 修回日期:2020-08-29 接受日期:2020-10-15 出版日期:2021-01-18 发布日期:2021-01-26

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

Yong Li(李勇)1, Xiao-Ming Li(李晓明)1, Rui-Ting Hao(郝瑞亭)1,†, Jie Guo(郭杰)1, Yu Zhuang(庄玉)1, Su-Ning Cui(崔素宁)2,3, Guo-Shuai Wei(魏国帅)1, Xiao-Le Ma(马晓乐)1, Guo-Wei Wang(王国伟)2,3,‡, Ying-Qiang Xu(徐应强)2,3, Zhi-Chuan Niu(牛智川)2,3, and Yao Wang(王耀)4   

  1. 1 School of Energy and Environment Science, Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology of the Ministry of Education, Yunnan Normal University, Kunming 650092, China; 2 Key Laboratory for SLs and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China; 4 National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
  • Received:2020-07-19 Revised:2020-08-29 Accepted:2020-10-15 Online:2021-01-18 Published:2021-01-26
  • Contact: †Corresponding author. E-mail: ruitinghao@semi.ac.cn ‡Corresponding author. E-mail: wangguowei@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61774130, 11474248, 61790581, and 51973070), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20105303120002), and the National Key Technology Research and Development Program of China (Grant No. 2018YFA0209101).

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Abstract: A series of InSb thin films were grown on GaAs substrates by molecular beam epitaxy (MBE). GaSb/AlInSb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer, so as to reduce the system defects. At the same time, the influence of different interface structures of AlInSb on the surface morphology of buffer layer is explored. The propagation mechanism of defects with the growth of buffer layer is compared and analyzed. The relationship between the quality of InSb thin films and the structure of buffer layer is summarized. Finally, the growth of high quality InSb thin films is realized.

Key words: compound buffers, AlInSb/GaSb, defect inhibition, InSb, molecular beam epitaxy (MBE)

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
68.55.-a (Thin film structure and morphology) 68.65.Cd (Superlattices)