Scalable fabrication of Bi2O2Se polycrystalline thin film for near-infrared optoelectronic devices applications

doi:10.1088/1674-1056/ac1571

中国物理B ›› 2021, Vol. 30 ›› Issue (10): 106803-106803.doi: 10.1088/1674-1056/ac1571

Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications

Bin Liu(刘斌) and Hong Zhou(周洪)^†

School of Physics and Electronics, Hunan University, Changsha 410082, China

收稿日期:2021-04-25 修回日期:2021-06-27 接受日期:2021-07-18 出版日期:2021-09-17 发布日期:2021-09-26
通讯作者: Hong Zhou E-mail:zhouhong@hnu.edu.cn
基金资助:
Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2019JJ40032).

Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications

Bin Liu(刘斌) and Hong Zhou(周洪)^†

School of Physics and Electronics, Hunan University, Changsha 410082, China

Received:2021-04-25 Revised:2021-06-27 Accepted:2021-07-18 Online:2021-09-17 Published:2021-09-26
Contact: Hong Zhou E-mail:zhouhong@hnu.edu.cn
Supported by:
Project supported by the Hunan Provincial Natural Science Foundation of China (Grant No. 2019JJ40032).

1. 2021-106803-SI.pdf(332KB)

摘要/Abstract

摘要： We present a controlled, stepwise formation of layered semiconductor Bi₂O₂Se thin films prepared via the vapour process by annealing topological insulator Bi₂Se₃ thin films in low oxygen atmosphere for different reactions. Photodetectors based on Bi₂O₂Se thin film show a responsivity of 1.7×10⁴ A/W at a wavelength of 980 nm. Field-effect transistors based on Bi₂O₂Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm²/V·s. In addition, the electrical properties of the devices after 4 months keeping in the air shows little change, implying outstanding air-stability of our Bi₂O₂Se thin films. From the obtained results, it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi₂O₂Se thin films for integrated optoelectronic applications.

关键词: thin films, Bi₂Se₃, vapor-phase deposition, photodetector, Bi₂O₂Se

Abstract: We present a controlled, stepwise formation of layered semiconductor Bi₂O₂Se thin films prepared via the vapour process by annealing topological insulator Bi₂Se₃ thin films in low oxygen atmosphere for different reactions. Photodetectors based on Bi₂O₂Se thin film show a responsivity of 1.7×10⁴ A/W at a wavelength of 980 nm. Field-effect transistors based on Bi₂O₂Se thin film exhibit n-type behavior and present a high electron mobility of 17 cm²/V·s. In addition, the electrical properties of the devices after 4 months keeping in the air shows little change, implying outstanding air-stability of our Bi₂O₂Se thin films. From the obtained results, it is evident that low oxygen annealing is a surprisingly effective method to fabricate Bi₂O₂Se thin films for integrated optoelectronic applications.

Key words: thin films, Bi₂Se₃, vapor-phase deposition, photodetector, Bi₂O₂Se

中图分类号: (Thin film structure and morphology)

68.55.-a

81.10.Bk (Growth from vapor) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

Bin Liu(刘斌) and Hong Zhou(周洪). Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications[J]. 中国物理B, 2021, 30(10): 106803-106803.

Bin Liu(刘斌) and Hong Zhou(周洪). Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications[J]. Chin. Phys. B, 2021, 30(10): 106803-106803.

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Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications

Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications

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