中国物理B ›› 2022, Vol. 31 ›› Issue (7): 76802-076802.doi: 10.1088/1674-1056/ac597e

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Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Jiafan Chen(陈家凡), Jun Huang(黄俊)†, Didi Li(李迪迪), and Ke Xu(徐科)†   

  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2021-10-19 修回日期:2022-01-27 接受日期:2022-03-02 出版日期:2022-06-09 发布日期:2022-06-18
  • 通讯作者: Jun Huang, Ke Xu E-mail:junhuang2008@sinano.ac.cn;kxu2006@sinano.ac.cn

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Jiafan Chen(陈家凡), Jun Huang(黄俊)†, Didi Li(李迪迪), and Ke Xu(徐科)†   

  1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2021-10-19 Revised:2022-01-27 Accepted:2022-03-02 Online:2022-06-09 Published:2022-06-18
  • Contact: Jun Huang, Ke Xu E-mail:junhuang2008@sinano.ac.cn;kxu2006@sinano.ac.cn

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摘要： We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy (HVPE). The influences of growth condition on surface morphology, residual strain and crystalline quality of AlN films have been investigated. With the increase of the V/III ratio, the growth mode of AlN grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology. Atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman analysis show that cracks appear due to tensile stress in the films with the lowest V/III ratio and the highest V/III ratio with a thickness of about 3 μm. In contrast, under the medium V/III ratio growth condition, the porous film can be obtained. Even when the thickness of the porous AlN film is further increased to 8 μm, the film remains porous and crack-free, and the crystal quality is improved.

关键词: hydride vapor phase epitaxy (HVPE), porous, AlN

Abstract: We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy (HVPE). The influences of growth condition on surface morphology, residual strain and crystalline quality of AlN films have been investigated. With the increase of the V/III ratio, the growth mode of AlN grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology. Atomic force microscopy (AFM), scanning electron microscopy (SEM) and Raman analysis show that cracks appear due to tensile stress in the films with the lowest V/III ratio and the highest V/III ratio with a thickness of about 3 μm. In contrast, under the medium V/III ratio growth condition, the porous film can be obtained. Even when the thickness of the porous AlN film is further increased to 8 μm, the film remains porous and crack-free, and the crystal quality is improved.

Key words: hydride vapor phase epitaxy (HVPE), porous, AlN

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 61.72.-y (Defects and impurities in crystals; microstructure)