Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

doi:10.1088/1674-1056/ac6865

中国物理B ›› 2023, Vol. 32 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/ac6865

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Chuang Wang(王闯)^1,2, Xiao-Dong Gao(高晓冬)², Di-Di Li(李迪迪)², Jing-Jing Chen(陈晶晶)², Jia-Fan Chen(陈家凡)², Xiao-Ming Dong(董晓鸣)², Xiaodan Wang(王晓丹)³, Jun Huang(黄俊)², Xiong-Hui Zeng(曾雄辉)^1,2,†, and Ke Xu(徐科)^1,2,4,5,‡

1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
4 Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou 215000, China;
5 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

收稿日期:2022-01-27 修回日期:2022-04-11 接受日期:2022-04-20 出版日期:2023-01-10 发布日期:2023-01-31
通讯作者: Xiong-Hui Zeng, Ke Xu E-mail:xhzeng2007@sinano.ac.cn;kxu2006@sinano.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61974158) and the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456).

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

1 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China;
4 Shenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced Semiconductors, Suzhou 215000, China;
5 Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

Received:2022-01-27 Revised:2022-04-11 Accepted:2022-04-20 Online:2023-01-10 Published:2023-01-31
Contact: Xiong-Hui Zeng, Ke Xu E-mail:xhzeng2007@sinano.ac.cn;kxu2006@sinano.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61974158) and the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456).

摘要/Abstract

摘要： A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates (NPSSs) by hydride vapor phase epitaxy (HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations (TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

关键词: hydride vapor phase epitaxy (HVPE), AlN, threading dislocations, nano-patterned sapphire substrate

Abstract: A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates (NPSSs) by hydride vapor phase epitaxy (HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations (TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

Key words: hydride vapor phase epitaxy (HVPE), AlN, threading dislocations, nano-patterned sapphire substrate

中图分类号: (Thin film structure and morphology)

68.55.-a

81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 61.72.-y (Defects and impurities in crystals; microstructure)

Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科). Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy[J]. 中国物理B, 2023, 32(2): 26802-026802.

参考文献

[1] Li K H, Liu X, Wang Q, Zhao S and Mi Z 2015 Nat. Nanotechnol. 10 140
[2] Hirayamal H, Maeda N, Fujikawa S, Toyoda S and Kamata N 2014 Jpn. J. Appl. Phys. 53 100209
[3] Kneissl M, Kolbe T, Chua C, Kueller V, Lobo N, Stellmach J, Knauer A, Rodriguez H, Einfeldt S, Yang Z, Johnson N M and Weyers M 2010 Semicond. Sci. Technol. 26 014036
[4] Yan J C, Wang J X, Zhang Y, Cong P P, Sun L L, Tian Y D, Zhao C and Li J M 2015 J. Cryst. Growth 414 254
[5] Dong P, Yan J C, Zhang Y, Wang J X, Zeng J P, Geng C, Cong P P, Sun L L, Wei T B, Zhao L X, Yan Q F, He C G, Qin Z X and Li J M 2014 J. Cryst. Growth 395 9
[6] Boichot R, Chen DY, Mercier F, Baillet F, Giusti G, Coughlan T, Chubarov M and Pons M 2017 Coatings 7 136
[7] Huang J, Niu M T, Zhang J C, wang W, Wang J F and Xu K 2017 J. Cryst. Growth 459 159
[8] Freitas Jr. JA, Culbertson J C, Mastro M A, Kumagai Y and Koukitu A 2012 J. Cryst. Growth 350 33
[9] Zhang X, Xu F J, Wan g J M, He C G, Zhang L S, Huang J, Cheng J P, Qin Z X, Yang XL, Tang N, Wang X Q and Shen B 2015 Cryst. Eng. Comm. 17 7496
[10] Conroy M, Zubialevich V Z, Li H, Conroy M, Zubialevich V Z, Li H N, Petkov N, Holmes J D and Parbrook P J 2015 J. Mater. Chem. C 3 431
[11] Pantha B N, Dahal R, Nakarmi M L, Nepal N, Li J, Lin J Y and Jiang H X 2007 Appl. Phys. Lett. 90 241101
[12] Tang B, Hu H P, Wan H, Zhao J, Gong L Y, Lei Y, Zhao Q and Zhou S J 2020 Appl. Surf. Sci. 518 146218
[13] Jain R, Sun W, Yang J, Shatalov M, Hu X, Sattu A, Lunev A, Deng J, Shturm I, Bilenko Y, Gaska R and Shur M S 2008 Appl. Phys. Lett. 93 051113
[14] Banal R G, Akashi Y, Matsuda K, Hayashi Y, Funato M and Kawakami Y 2013 Jpn. J. Appl. Phys. 52 08JB21
[15] Imura M, Nakano K, Narita G, Fujimoto N, Okadaa N, Balakrishnan K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Noro T, Takagi T and Bandoh A 2007 J. Cryst. Growth 298 257
[16] Ben J W, Shi Z M, Zang H, Sun X J, Liu X K, Lu W and Li D B 2020 Appl. Phys. Lett. 116 251601
[17] Liu X H, Zhang J C, Su X J, Hung J, Zheng S N, Hu Y Y, Ye B B, Zhao J J, Wang J F, Zhang J C and Xu K 2016 Appl. Phys. Express 9 045501
[18] Long H L, Dai J N, Zhang Y, Wang S, Tan B, Zhang S, Xu L L, Shan M C, Feng Z C, Kuo H C and Chen C Q 2019 Appl. Phys. Lett. 114 042101
[19] Iba Y, Shojiki K, Uesugi K, Xiao S Y and Miyake H 2020 J. Cryst. Growth 532 125397
[20] Xu F J, Zhang L S, Xie N, Wang M X, Sun Y H, Liu B Y, Ge W K, Wang X Q and Shen B 2019 Cryst. Eng. Comm. 21 2490
[21] Wang T Y, Tasi C T, Lin K Y, Huang S Y, Horng R H and Wuu D S 2018 Appl. Surf. Sci. 455 1123
[22] Xiao S Y, Jiang N, Shojiki K, Uesugi K and Miyake H 2019 Jpn. J. Appl. Phys. 58 SC1003
[23] Xiao S Y, Shojiki K and Miyake H 2021 J. Cryst. Growth 566 126163
[24] Xie N, Xu F J, Wang J M, Sun Y H, Liu B Y, Zhang N, Lang J, Fang X Z, Ge W K, Qin Z X, Kang X N, Yang X L, Wang X Q and Shen B 2020 Appl. Phys. Express 13 015504
[25] Taniyasu Y, Kasu M and Makimoto T 2007 J. Cryst. Growth 298 310
[26] Uesugi K, Shojiki K, Tezen Y, Hayashi Y and Miyake H 2020 Appl. Phys. Lett. 116 062101
[27] Tasi CT, Wang W K, Tsai T Y, Huang S Y, Horng R H and Wuu D S 2017 Materials 10 605
[28] Claudel A, Fellmanna V Gélard I, Couduriera N, Sauvage D, Balajiab M, Blanquet E, Boichot R, Beutier G, Coindeaub S, Pierrete A, Attal-Trétout B, Luca S, Criscib A, Baskar K and Pons M 2014 Thin Solid Films 573 140
[29] Takami M, Kurisu A, Abe Y, Okada N and Tadatomo K 2011 Phys. Status Solidi C 8 2101
[30] Okada N, Kurisu A, Murakami K and Tadatomo K 2009 Appl. Phys. Express 2 091001
[31] Sun C J, Kung P, Saxler A, Ohsato H, Haritos K and Razeghi M 1994 J. Appl. Phys. 75 3964
[32] Fleischmann S, Mogilatenko A, Hagedorn S, Richter E, Goran D, Schäfer P, Zeimer U, Weyers M and Tränkle G 2015 J. Cryst. Growth 414 32
[33] Huang J, Niu M T, Sun M S, Su X J and Xu K 2019 Cryst. Eng. Comm. 21 2431
[34] Li D D, Chen J J, Su X J, Huang J, Niu M T, Xu J T and Xu K 2021 Chin. Phys. B 30 036801
[35] Su X J, Huang J, Zhang J P, Wang J F and Xu K 2019 J. Cryst. Growth 515 72
[36] Zhang L S, Xu F J, Wang J M, Chen G, Guo W W, Wang M X, Sheng B W, Lu L, Qin Z X, Wang X Q and Shen B 2016 Sci. Rep. 6 1

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[2]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[3]	Jiafan Chen(陈家凡), Jun Huang(黄俊), Didi Li(李迪迪), and Ke Xu(徐科). Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy[J]. 中国物理B, 2022, 31(7): 76802-076802.
[4]	Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Introducing voids around the interlayer of AlN by high temperature annealing[J]. 中国物理B, 2022, 31(7): 76104-076104.
[5]	Taofei Pu(蒲涛飞), Shuqiang Liu(刘树强), Xiaobo Li(李小波), Ting-Ting Wang(王婷婷), Jiyao Du(都继瑶), Liuan Li(李柳暗), Liang He(何亮), Xinke Liu(刘新科), and Jin-Ping Ao(敖金平). Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator[J]. 中国物理B, 2022, 31(12): 127701-127701.
[6]	Xiao Wang(王骁), Yu-Min Zhang(张育民), Yu Xu(徐俞), Zhi-Wei Si(司志伟), Ke Xu(徐科), Jian-Feng Wang(王建峰), and Bing Cao(曹冰). Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE[J]. 中国物理B, 2021, 30(6): 67306-067306.
[7]	宓珉瀚, 张濛, 武盛, 杨凌, 侯斌, 周雨威, 郭立新, 马晓华, 郝跃. High performance InAlN/GaN high electron mobility transistors for low voltage applications[J]. 中国物理B, 2020, 29(5): 57307-057307.
[8]	张育民, 王建峰, 蔡德敏, 任国强, 徐俞, 王明月, 胡晓剑, 徐科. Growth and doping of bulk GaN by hydride vapor phase epitaxy[J]. 中国物理B, 2020, 29(2): 26104-026104.
[9]	刘艳, 林兆军, 吕元杰, 崔鹏, 付晨, 韩瑞龙, 霍宇, 杨铭. Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(9): 97104-097104.
[10]	韩瑞林, 陈晓阳, 闫羽. Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study[J]. 中国物理B, 2017, 26(9): 97503-097503.
[11]	A R Degheidy,E B Elkenany. Electronic, optical, and mechanical properties of BN, AlN, and InN with zinc-blende structure under pressure[J]. 中国物理B, 2017, 26(8): 86103-086103.
[12]	卞栋梁, 吴云, 贾敏, 龙昌柏, 焦胜博. Comparison between AlN and Al₂O₃ ceramics applied to barrier dielectric of plasma actuator[J]. 中国物理B, 2017, 26(8): 84703-084703.
[13]	徐庆君, 刘斌, 张士英, 陶涛, 谢自力, 修向前, 陈敦军, 陈鹏, 韩平, 张荣, 郑有炓. Structural characterization of Al_0.55Ga_0.45N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy[J]. 中国物理B, 2017, 26(4): 47801-047801.
[14]	韩瑞林, 姜世民, 闫羽. Electronic structures and magnetic properties of Zn- and Cd-doped AlN nanosheets: A first-principles study[J]. 中国物理B, 2017, 26(2): 27502-027502.
[15]	韩铁成, 赵红东, 杨磊, 王杨. Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier[J]. 中国物理B, 2017, 26(10): 107301-107301.