Molecular beam epitaxy growth of quantum devices

doi:10.1088/1674-1056/aca6d3

中国物理B ›› 2022, Vol. 31 ›› Issue (12): 126804-126804.doi: 10.1088/1674-1056/aca6d3

所属专题： TOPICAL REVIEW — Celebrating 30 Years of Chinese Physics B

Molecular beam epitaxy growth of quantum devices

Ke He(何珂)^1,2,3,†

1 State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
2 Frontier Science Center for Quantum Information, Beijing 100084, China;
3 Beijing Institute of Quantum Information Science, Beijing 100193, China

收稿日期:2022-08-05 修回日期:2022-11-11 接受日期:2022-11-29 出版日期:2022-11-11 发布日期:2022-11-28
通讯作者: Ke He E-mail:kehe@tsinghua.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 92065206).

Molecular beam epitaxy growth of quantum devices

Ke He(何珂)^1,2,3,†

1 State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
2 Frontier Science Center for Quantum Information, Beijing 100084, China;
3 Beijing Institute of Quantum Information Science, Beijing 100193, China

Received:2022-08-05 Revised:2022-11-11 Accepted:2022-11-29 Online:2022-11-11 Published:2022-11-28
Contact: Ke He E-mail:kehe@tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 92065206).

摘要/Abstract

摘要： The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment. Here, I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum. The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.

关键词: molecular beam epitaxy, fabrication, ultrahigh vacuum, quantum computation

Abstract: The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment. Here, I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum. The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.

Key words: molecular beam epitaxy, fabrication, ultrahigh vacuum, quantum computation

中图分类号: (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

68.65.-k

68.55.-a (Thin film structure and morphology) 81.07.-b (Nanoscale materials and structures: fabrication and characterization) 03.67.Lx (Quantum computation architectures and implementations)

Ke He(何珂). Molecular beam epitaxy growth of quantum devices[J]. 中国物理B, 2022, 31(12): 126804-126804.

Ke He(何珂). Molecular beam epitaxy growth of quantum devices[J]. Chin. Phys. B, 2022, 31(12): 126804-126804.

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Molecular beam epitaxy growth of quantum devices

Molecular beam epitaxy growth of quantum devices

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