Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

doi:10.1088/1674-1056/20/1/018102

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/20/1/018102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

贺继方, 牛智川, 常秀英, 倪海桥, 朱岩, 李密锋, 尚向军

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-03-31 修回日期:2010-07-01 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60625405), and the National Basic Research Program of China (Grant Nos. 2007CB936304 and 2010CB327601).

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

He Ji-Fang(贺继方), Niu Zhi-Chuan(牛智川)^†, Chang Xiu-Ying(常秀英), Ni Hai-Qiao(倪海桥), Zhu Yan(朱岩), Li Mi-Feng(李密锋), and Shang Xiang-Jun(尚向军)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-03-31 Revised:2010-07-01 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60625405), and the National Basic Research Program of China (Grant Nos. 2007CB936304 and 2010CB327601).

摘要/Abstract

摘要： Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates.

Abstract: Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III–V compound semiconductor optoelectronic devices on Ge substrates.

Key words: molecular beam epitaxy, anti-phase domain, GaAs/Ge interface

中图分类号: (Molecular, atomic, ion, and chemical beam epitaxy)

81.15.Hi

68.35.Ct (Interface structure and roughness) 68.65.Fg (Quantum wells)

贺继方, 牛智川, 常秀英, 倪海桥, 朱岩, 李密锋, 尚向军. Molecular beam epitaxy growth of GaAs on an offcut Ge substrate[J]. 中国物理B, 2011, 20(1): 18102-018102.

He Ji-Fang(贺继方), Niu Zhi-Chuan(牛智川), Chang Xiu-Ying(常秀英), Ni Hai-Qiao(倪海桥), Zhu Yan(朱岩), Li Mi-Feng(李密锋), and Shang Xiang-Jun(尚向军). Molecular beam epitaxy growth of GaAs on an offcut Ge substrate[J]. Chin. Phys. B, 2011, 20(1): 18102-018102.

参考文献 23

[1]	Karam N H, King R R, Haddad M, Ermer J H, Yoon H, Cotal H L, Sudharsanan R, Eldredge J W, Edmondson K, Joslin D E, Krut D D, Takahashi M, Nishikawa W, Gillanders M, Granata J, Hebert P, Cavicchi B T and Lillington D R 2001 Sol. Energy Mater. Solar Cells 66 453
[2]	Karam N H, King R R, Cavicchi B T, Krut D D, Ermer J H, Haddad M, Li C, Joslin D E, Takahashi M, Eldredge J W, Nishikawa W T, Lillington D R, Keyes B M and Ahrenkiel R K 1999 IEEE Trans. Electron Dev. 46 2116
[3]	Takamoto T, Agui T, Washio H, Takahashi N, Nakamura K, Anzawa O, Kaneiwa M, Kamimura K, Okamoto K and Yamaguchi M 2005 Photovoltaic Specialists Conference 2005, Conference Record of the Thirty-first IEEE Florida, Jan. 3--5 2005 p519
[4]	Yamaguchi M 2003 Sol. Energy Mater. Solar Cells 75 261
[5]	Wojtczuk S J, Tobin S P, Keavney C J, Bajgar C, Sanfacon M M, Geoffroy L M, Dixon T M, Vernon S M, Scofield J D and Ruby D S 1990 IEEE Trans. Electron Dev. 37 455
[6]	Zhao H J, He S Y, Sun Y Z, Sun Q, Xiao Z B, L"u W and Huang C Y 2009 Acta Phys. Sin. 58 404 (in Chinese)
[7]	Chen M B, Cui R Q, Wang L X, Zhang Z W, Lu J F and Chi W Y 2004 Acta Phys. Sin. 53 3632 (in Chinese)
[8]	D'Hondt M, Yu Z Q, Depreter B, Sys C, Moerman I, Demeester P and Mijlemans P 1998 J. Cryst. Growth 195 655
[9]	Tobin S P, Vernon S M, Bajgar C, Haven V E, Geoffroy L M, Sanfacon M M, Lillington D R, Hart Jr R E, Emery K A and Matson R J 1998 Photovoltaic Specialists Conference, 1988, Conference Record of the Twentieth IEEE Las Vegas, Sep. 26--30 1988 p405
[10]	King R R, Law D C, Edmondson K M, Fetzer C M, Kinsey G S, Yoon H, Sherif R A and Karam N H 2007 Appl. Phys. Lett. 90 183156
[11]	Guter W, Schone J, Philipps S P, Steiner M, Siefer G, Wekkeli A, Welser E, Oliva E, Bett A W and Dimrot F 2009 Appl. Phys. Lett. 94 223504
[12]	Kroemer H 1987 J. Cryst. Growth 81 193
[13]	Li Y, Salviati G, Bongers M M G, Lazzarini L, Nasi L and Giling L J 1996 J. Cryst. Growth 163 195
[14]	Strite S, Biswas D, Kumar N S, Fradkin M and Morkoc H 1990 Appl. Phys. Lett. 56 244
[15]	Wan A, Menon V, Forrest S R, Wasserman D, Lyon S A and Kahn A 2004 J. Vac. Sci. Technol. B 22 1893
[16]	Chen J C, Ristow M L, Cubbage J I and Werthen J G 1991 Appl. Phys. Lett. 58 2282
[17]	Chen J C, Ristow M L, Cubbage J I and Werthen J G 1992 J. Electron. Mater. 21 347
[18]	Sieg R M, Ringel S A, Ting S M, Fitzgerald E A and Sacks R N 1998 J. Electron. Mater. 27 900
[19]	Knuuttila L, Lankinen A, Likonen J, Lipsanen H, Lu X, McNally P, Riikonen J and Tuomi T 2005 Jpn. J. Appl. Phys. Part 1 44 7777
[20]	Ni H Q, Niu Z C, Xu X H, Xu Y Q, Zhang W, Wei X, Bian L F, He Z H, Han Q and Wu R H 2004 Appl. Phys. Lett. 84 5100
[21]	Gan S, Li L, Begarney M J, Law D, Han B K and Hicks R F 1999 J. Appl. Phys. 85 2004
[22]	Jasik A, Wnuk A, Wojcik-Jedlinska A, Jakiela R A, Muszalski J and Strupinski W 2009 J. Cryst. Growth 311 4423
[23]	Jasik A, Wnuk A, Wojcik-Jedlinska A, Jakiela R A, Muszalski J, Strupinski W and Bugajski M 2008 J. Cryst. Growth 310 2785 endfootnotesize

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

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