中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17305-017305.doi: 10.1088/1674-1056/20/1/017305

• • 上一篇    下一篇

Investigation of resistive switching behaviours in WO3-based RRAM devices

刘肃1, 李颖弢2, 王艳2, 龙世兵3, 吕杭炳3, 刘琦3, 王琴3, 张森3, 连文泰3, 刘明3   

  1. (1)Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; (2)Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing; (3)Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2010-07-13 修回日期:2010-08-02 出版日期:2011-01-15 发布日期:2011-01-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2008CB925002 and 2010CB934200), the National Natural Science Foundation of China (Grant Nos. 60825403 and 50972160) and the National High Technology Research and Development Program of China (Grant No. 2009AA03Z306).

Investigation of resistive switching behaviours in WO3-based RRAM devices

Li Ying-Tao(李颖弢)a)b),Long Shi-Bing(龙世兵)b),Lü Hang-Bing(吕杭炳) b), Liu Qi(刘琦)b), Wang Qin(王琴)b), Wang Yan(王艳)a)b),Zhang Sen(张森)b), Lian Wen-Tai(连文泰)b), Liu Su(刘肃)a)†,and Liu Ming(刘明)b)   

  1. a Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2010-07-13 Revised:2010-08-02 Online:2011-01-15 Published:2011-01-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2008CB925002 and 2010CB934200), the National Natural Science Foundation of China (Grant Nos. 60825403 and 50972160) and the National High Technology Research and Development Program of China (Grant No. 2009AA03Z306).

PDF (PC)

1552

赞

摘要： In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

关键词: resistive random access memory, resistive switching, nonvolatile, WO3

Abstract: In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

Key words: resistive random access memory, resistive switching, nonvolatile, WO3

中图分类号:  (Metal-insulator-metal structures)

  • 73.40.Rw
73.50.-h (Electronic transport phenomena in thin films) 72.80.Sk (Insulators)