中国物理B ›› 2011, Vol. 20 ›› Issue (1): 10210-010210.doi: 10.1088/1674-1056/20/1/010210

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An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

程新红1, 王中健1, 徐大伟1, 宋朝瑞1, 俞跃辉1, 何大伟2   

  1. (1)State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (2)State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2010-06-12 修回日期:2010-08-11 出版日期:2011-01-15 发布日期:2011-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10775166), and the Zhejiang Provincial Science Technology Foundation, China (Grant No. 2008C31002).

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

He Da-Wei(何大伟)a)b), Cheng Xin-Hong(程新红) a)†, Wang Zhong-Jian(王中健)a), Xu Da-Wei(徐大伟)a), Song Zhao-Rui(宋朝瑞)a), and Yu Yue-Hui(俞跃辉)a)   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; b Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2010-06-12 Revised:2010-08-11 Online:2011-01-15 Published:2011-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10775166), and the Zhejiang Provincial Science Technology Foundation, China (Grant No. 2008C31002).

摘要: In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.

关键词: coplanar waveguide, silicon-on-insulator, conformal mapping

Abstract: In this paper, the authors present an analytical model for coplanar waveguide on silicon-on-insulator substrate. The four-element topological network and the conformal mapping technique are used to analyse the capacitance and the conductance of the sandwich substrate. The validity of the model is verified by the full-wave method and the experimental data. It is found that the inductance, the resistance, the capacitance and the conductance from the analytical model show they are in good agreement with the corresponding values extracted from experimental S-parameter until 10 GHz.

Key words: coplanar waveguide, silicon-on-insulator, conformal mapping

中图分类号:  (Numerical approximation and analysis)

  • 02.60.-x
72.60.+g (Mixed conductivity and conductivity transitions) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)