Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

doi:10.1088/1674-1056/19/8/087801

中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87801-087801.doi: 10.1088/1674-1056/19/8/087801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

刘洁¹, 赵艳¹, 蒋毅坚¹, 刘玉龙²

(1)Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China; (2)Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2010-04-12 修回日期:2010-05-07 出版日期:2010-08-15 发布日期:2010-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10974009).

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

Liu Jie(刘洁)^a), Zhao Yan(赵艳)^a), Jiang Yi-Jian(蒋毅坚)^a), and Liu Yu-Long(刘玉龙)^b)^†

^a Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China; ^b Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2010-04-12 Revised:2010-05-07 Online:2010-08-15 Published:2010-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10974009).

摘要/Abstract

摘要： In this paper, we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence. Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies. The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm² become stronger, whereas for those deteriorated by irradiation above 200 mJ/cm², the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV, probably due to the changes in the charge states of the defects. Enhanced yellow-green emissions are well resolved into four peaks at around 1.98, 2.19, 2.36, and 2.53 eV due to a shallow irradiation depth. Possible origins are proposed and discussed.

Abstract: In this paper, we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence. Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies. The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm² become stronger, whereas for those deteriorated by irradiation above 200 mJ/cm², the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV, probably due to the changes in the charge states of the defects. Enhanced yellow-green emissions are well resolved into four peaks at around 1.98, 2.19, 2.36, and 2.53 eV due to a shallow irradiation depth. Possible origins are proposed and discussed.

Key words: laser irradiation, ZnO single crystal, photoluminescence

中图分类号: (Ultraviolet, visible, and infrared radiation effects (including laser radiation))

61.80.Ba

61.82.Fk (Semiconductors) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 78.55.Et (II-VI semiconductors)

刘洁, 赵艳, 蒋毅坚, 刘玉龙. Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal[J]. 中国物理B, 2010, 19(8): 87801-087801.

Liu Jie(刘洁), Zhao Yan(赵艳), Jiang Yi-Jian(蒋毅坚), and Liu Yu-Long(刘玉龙). Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal[J]. Chin. Phys. B, 2010, 19(8): 87801-087801.

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Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

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