Effects of Al component content on optoelectronic properties of AlxGa1-xN

doi:10.1088/1674-1056/27/10/106102

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 106102-106102.doi: 10.1088/1674-1056/27/10/106102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effects of Al component content on optoelectronic properties of Al_xGa_1-xN

Yan-Jun Ji(纪延俊), Jun-Ping Wang(王俊平), You-Wen Liu(刘友文)

1 College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
2 College of Aeronautical Engineering, Bingzhou University, Bingzhou 256603, China

收稿日期:2018-06-19 修回日期:2018-07-22 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Yan-Jun Ji, You-Wen Liu E-mail:jiyjun@126.com;youwen@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61171042).

Effects of Al component content on optoelectronic properties of Al_xGa_1-xN

Yan-Jun Ji(纪延俊)^1,2, Jun-Ping Wang(王俊平)^1,2, You-Wen Liu(刘友文)¹

1 College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China;
2 College of Aeronautical Engineering, Bingzhou University, Bingzhou 256603, China

Received:2018-06-19 Revised:2018-07-22 Online:2018-10-05 Published:2018-10-05
Contact: Yan-Jun Ji, You-Wen Liu E-mail:jiyjun@126.com;youwen@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61171042).

摘要/Abstract

摘要：

Using density functional theory, the electronic structures, lattice constants, formation energies, and optical properties of Al_xGa_1-xN are determined with Al component content x in a range from 0 to 1. As x increases, the lattice constants decrease in e-exponential form, and the band gap increases with a band bending parameter b=0.3954. The N-Al interaction force in the (0001) direction is greater than the N-Ga interaction force, while the N-Al interaction force is less than the N-Ga interaction force in the (1010) direction. The formation energies under different Al component content are negative and increase with Al component content increasing. The static dielectric function decreases, the absorption edge has a blue shift, and the energy loss spectrum moves to high energy with the Al component content increasing.

关键词: GaN, photocathode, electronic structure, optical properties

Abstract:

Key words: GaN, photocathode, electronic structure, optical properties

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

71.22.+i (Electronic structure of liquid metals and semiconductors and their Alloys) 61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 36.20.Kd (Electronic structure and spectra)

纪延俊, 王俊平, 刘友文. Effects of Al component content on optoelectronic properties of Al_xGa_1-xN[J]. 中国物理B, 2018, 27(10): 106102-106102.

Yan-Jun Ji(纪延俊), Jun-Ping Wang(王俊平), You-Wen Liu(刘友文). Effects of Al component content on optoelectronic properties of Al_xGa_1-xN[J]. Chin. Phys. B, 2018, 27(10): 106102-106102.

参考文献 37

[1]	Shao J P, Han Y J, Wang L, Jiang Y, Xi G Y, Li H T, Zhao W and Luo Y 2006 Chin. Phys. Lett. 23 432 doi: 10.1088/0256-307X/23/2/044
[2]	Zhang W, Xu J, Ye W, Li Y, Qi Z Q, Dai J N, Wu, Z H, Chen C Q, Yin J, Li J, Jiang H and Fang Y Y 2015 Appl. Phys. Lett. 106 021112 doi: 10.1063/1.4905929
[3]	Isamu A and Hiroshi A 1997 J. Appl. Phys. 36 5393 doi: 10.1143/JJAP.36.5393
[4]	Bar-Ilan A H, Zamir S, Katz O, Meyler B and Salzman 2001 Mater. Sci. Eng. A 302 14 doi: 10.1016/S0921-5093(00)01347-2
[5]	Siegmund O H W, Tremsin A S, Vallerga J V, Mcphate J B and Hull J S 2008 Proc. SPIE 7021 70211B
[6]	Zhao H P, Liu G Y and Tansu N 2010 Appl. Phys. Lett. 97 131114 doi: 10.1063/1.3493188
[7]	Chow W W 2011 Opt. Express 19 21818 doi: 10.1364/OE.19.021818
[8]	Farrell R M, Hsu P S, Haeger D A, Fujito K, DenBaars S P, Speck J S and Nakamura S 2010 Appl. Phys. Lett. 96 231113 doi: 10.1063/1.3443719
[9]	Zhang J, Zhao H P and Tansu N 2011 Appl. Phys. Lett. 98 171111 doi: 10.1063/1.3583442
[10]	Dora Y, Arpan C, Lee M C, Stacia K, Stephen D B and Umesh M 2006 IEEE Electron. Dev. L 27 713 doi: 10.1109/LED.2006.881020
[11]	Wang X H, Chang B K, Ren L and Gao P 2011 Appl. Phys. Lett. 98 1
[12]	Bai, J, Gong, Y P, Li, Z and Wang T 2018 Sol. Energy Mater. Sol. Cells 175 47 doi: 10.1016/j.solmat.2017.10.005
[13]	Du X Q, Chang B K, Qian Y S and Pin G 2011 Chin. Opt. Lett. 9 010401 doi: 10.3788/COL201109.010401
[14]	Liu, Sh M, Wang, Q, Xiao H L, Wang K, Wang C M, Wang X L, Ge W K and Wang Z G 2017 Superlattices & Microstructures 109 194 doi: lattices
[15]	Ji Y J, Du Y J and Wang M S 2013 Chin. Phys. B 22 117103 doi: 10.1088/1674-1056/22/11/117103
[16]	Han D Y, Li H J, Zhao G J, Wei H Y, Yang S Y and Wang L S 2016 Chin. Phys. B 25 048105 doi: 10.1088/1674-1056/25/4/048105
[17]	Li X H, Xie H G, Ponce F A, Ryou J H and Detchprohm T 2015 Appl. Phys. Lett. 107 241109 doi: 10.1063/1.4938136
[18]	Detchprohm T, Liu Y S, Mehta K, Wang S, Xie H G, Kao T T, Shen S C, Yoder P D, Ponce F A and Dupuis R 2017 Appl. Phys. Lett. 110 011105 doi: 10.1063/1.4973581
[19]	Xie J, Mita S, Bryan Z, Guo W and Hussey L 2013 Appl. Phys. Lett. 102 171102 doi: 10.1063/1.4803689
[20]	Yao Ch J, Ye X C and Sun R 2017 Appl. Phys. A 123 439 doi: 10.1007/s00339-017-1056-5
[21]	Milman V, Winkler B, White J A, Pickard C J, Payne M C, Akhmatskaya E V and Nobes R H 2000 J. Quantum Chem. 77 895 doi: 10.1002/(SICI)1097-461X(2000)77:5<895::AID-QUA10>3.0.CO;2-C
[22]	Vanderbilt D 1990 Phys. Rev. B 41 7892 doi: 10.1103/PhysRevB.41.7892
[23]	Dmitriev A V, Oruzheinikov A L, eds. Gaskill D K, Brandt C D and Nemanich R J 1996 Material Research Society Symposium Proceedings, Pittsburgh PA 423 69 doi: 10.1557/PROC-423-69
[24]	Bougrov V, Levinshtein M E, Rumyantsev S L, Zubrilov A 2001 eds. Levinshtein M E, Rumyantsev S L and Shur M S (New York:John Wiley & Sons, Inc.) p. 1
[25]	Du Y J, Chang B K, Zhang J J, Wang X H, Li B and Wang M S 2011 Adv. Mater. Rapid Commun. 5 1050
[26]	Vegard L 1921 Z. F. Phys. 5 17 doi: 10.1007/BF01349680
[27]	Angerer H, Brunner D, FreudenbeRg F, Ambacher O, Stutzmann M, Hopier R, Metzger T, Bom E, Dollinger G, Bergmaier A, Karsch S and Komer H J 1997 Appl. Phys. Lett. 71 1504 doi: 10.1063/1.119949
[28]	Lee S R, Wright A F, Crawford M H, Petersen G A, Han J and Biefeld R M 1999 Appl. Phys. Lett. 74 3344 doi: 10.1063/1.123339
[29]	Roberto N G, Armando R S, Alvaro P A and Donald H G 2008 Rev. Mex. Fis. 54 111
[30]	Yun F, Reshchikov M A, He L, King T, Morkoç H, Novak S W and Wei L 2002 J. Appl. Phys. 92 4837 doi: 10.1063/1.1508420
[31]	Nepal N, Li J, Nakarmi M L, Lin J Y and Jiang H X 2005 Appl. Phys. Lett. 7 242104
[32]	Brunner D, Angerer H, Bustarret E, Freudenberg F, Hopler R, Dimitrov R, Ambacher O and Stutzmann M 1997 J. Appl. Phys. 82 5090 doi: 10.1063/1.366309
[33]	Shan W, Ager Ⅲ J W, Yu K M and Walukiewicz W 1999 J. Appl. Phys. 85 8505 doi: 10.1063/1.370696
[34]	Katz, O, Meyler B, Tisch U, Salzman J 2001 Phys. Status Solidi (A) Appl. Res. 188 789
[35]	Liou B T, Kuo Y K 2012 Appl. Phys. A 106 1013 doi: 10.1007/s00339-012-6772-2
[36]	Yu X H, Du Y J, Chang B K, Ge Z H and Wang H G 2013 Optik 124 4402 doi: 10.1016/j.ijleo.2013.03.008
[37]	Lucarini V, Sarrinen J J, Peiponen K E and Vartiainen E M 2005 Kramers-Kronig Springer Series in Optical Seciences (Berlin/Heidelberg/New York:Springer)

Effects of Al component content on optoelectronic properties of Al_xGa_1-xN

Effects of Al component content on optoelectronic properties of Al_xGa_1-xN

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 37

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Yuanqi Jiang(蒋元祺), Ping Peng(彭平). Predicting novel atomic structure of the lowest-energy Fe_nP_13-n(n=0-13) clusters: A new parameter for characterizing chemical stability[J]. 中国物理B, 2023, 32(4): 47102-047102.
[2]	Ming Yan(闫明), Zhi-Yuan Xie(谢志远), and Miao Gao(高淼). High-temperature ferromagnetism and strong π-conjugation feature in two-dimensional manganese tetranitride[J]. 中国物理B, 2023, 32(3): 37104-037104.
[3]	Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201.
[4]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[5]	Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101.
[6]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[7]	Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302.
[8]	Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Optical and electrical properties of BaSnO₃ and In₂O₃ mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature[J]. 中国物理B, 2023, 32(1): 18101-018101.
[9]	Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306.
[10]	Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103.
[11]	Zi-Heng Wang(王自衡), Yi-Jun Zhang(张益军), Shi-Man Li(李诗曼), Shan Li(李姗), Jing-Jing Zhan(詹晶晶), Yun-Sheng Qian(钱芸生), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Gang-Cheng Jiao(焦岗成), and Yu-Gang Zeng(曾玉刚). Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation[J]. 中国物理B, 2022, 31(9): 98505-098505.
[12]	Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401.
[13]	Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li₂S and Li₃PS₄ with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203.
[14]	Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇). Mottness, phase string, and high-T_c superconductivity[J]. 中国物理B, 2022, 31(8): 87104-087104.
[15]	Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠). Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow[J]. 中国物理B, 2022, 31(8): 80501-080501.