中国物理B ›› 2010, Vol. 19 ›› Issue (7): 76803-076803.doi: 10.1088/1674-1056/19/7/076803

• • 上一篇    下一篇

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

汪莱, 王嘉星, 赵维, 邹翔, 罗毅   

  1. Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 出版日期:2010-07-15 发布日期:2010-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020, 60723002, 50706022 and 60977022), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Techgnology Research and Development Program of China (Grant Nos. 2007AA05Z429 and 2008AA03A194), the Beijing Natural Science Foundation, China (Grant No. 4091001), and the Industry, Academia and Research combining and Public Science and Technology Special Program of Shenzhen, China (Grant No. 08CXY-14).

Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

Wang Lai(汪莱)† , Wang Jia-Xing(王嘉星), Zhao Wei(赵维), Zou Xiang(邹翔), and Luo Yi(罗毅)   

  1. Tsinghua National Laboratory for Information Science and Technology / State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • Online:2010-07-15 Published:2010-07-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60536020, 60723002, 50706022 and 60977022), the National Basic Research Program of China (Grant Nos. 2006CB302800 and 2006CB921106), the National High Techgnology Research and Development Program of China (Grant Nos. 2007AA05Z429 and 2008AA03A194), the Beijing Natural Science Foundation, China (Grant No. 4091001), and the Industry, Academia and Research combining and Public Science and Technology Special Program of Shenzhen, China (Grant No. 08CXY-14).

PDF (PC)

1384

赞

摘要： Blue In0.2Ga0.8N multiple quantum wells (MQWs) with InxGa1 - xN (x=0.01-0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.

Abstract: Blue In0.2Ga0.8N multiple quantum wells (MQWs) with InxGa1-xN (x=0.01-0.04) barriers are grown by metal organic vapour phase epitaxy. The internal quantum efficiencies (IQEs) of these MQWs are studied in a way of temperature-dependent photoluminescence spectra. Furthermore, a 2-channel Arrhenius model is used to analyse the nonradiative recombination centres (NRCs). It is found that by adopting the InGaN barrier beneath the lowest well, it is possible to reduce the strain hence the NRCs in InGaN MQWs. By optimizing the thickness and the indium content of the InGaN barriers, the IQEs of InGaN/InGaN MQWs can be increased by about 2.5 times compared with conventional InGaN/GaN MQWs. On the other hand, the incorporation of indium atoms into the intermediate barriers between adjacent wells does not improve IQE obviously. In addition, the indium content of the intermediate barriers should match with that of the lowest barrier to avoid relaxation.

Key words: metal organic vapour phase epitaxy, quantum wells, nitrides, light emitting diodes

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
73.21.Fg (Quantum wells) 78.67.De (Quantum wells) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 78.55.Cr (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)