Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition

doi:10.1088/1674-1056/ac6737

中国物理B ›› 2022, Vol. 31 ›› Issue (8): 88105-088105.doi: 10.1088/1674-1056/ac6737

Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition

Jia-Jun Ma(马佳俊)^1,2,†, Kang Wu(吴康)^1,2,†, Zhen-Yu Wang(王振宇)², Rui-Song Ma(马瑞松)¹, Li-Hong Bao(鲍丽宏)^1,2,4, Qing Dai(戴庆)³, Jin-Dong Ren(任金东)^3,‡, and Hong-Jun Gao(高鸿钧)^1,2,4,§

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nano-technology, National Center for Nanoscience and Technology, Beijing 100190, China;
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2022-03-23 修回日期:2022-04-11 接受日期:2022-04-14 出版日期:2022-07-18 发布日期:2022-07-27
通讯作者: Jin-Dong Ren, Hong-Jun Gao E-mail:renjd@nanoctr.cn;hjgao@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61888102), the National Natural Science Foundation of China (Grant No. 12004417), the National Key Research and Development Program of China (Grant Nos. 2018YFA0305800 and 2019YFA0308500), the National Natural Science Foundation of China (Grant No. U2032206), Chinese Academy of Sciences (Grant Nos. XDB36000000, YSBR-003, and 112111KYSB20160061), Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant Nos. XDB30000000 and XDB28000000), Youth Innovation Promotion Association of CAS (Grant No. Y201902), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003).

Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition

1 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nano-technology, National Center for Nanoscience and Technology, Beijing 100190, China;
4 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China

Received:2022-03-23 Revised:2022-04-11 Accepted:2022-04-14 Online:2022-07-18 Published:2022-07-27
Contact: Jin-Dong Ren, Hong-Jun Gao E-mail:renjd@nanoctr.cn;hjgao@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61888102), the National Natural Science Foundation of China (Grant No. 12004417), the National Key Research and Development Program of China (Grant Nos. 2018YFA0305800 and 2019YFA0308500), the National Natural Science Foundation of China (Grant No. U2032206), Chinese Academy of Sciences (Grant Nos. XDB36000000, YSBR-003, and 112111KYSB20160061), Strategic Priority Research Program of Chinese Academy of Sciences (CAS) (Grant Nos. XDB30000000 and XDB28000000), Youth Innovation Promotion Association of CAS (Grant No. Y201902), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003).

1. 附件.pdf(667KB)

摘要/Abstract

摘要： We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS₂ monolayer on the SiO₂ substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO₃ flakes on the mica substrate compared to MoO₃ powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS₂ monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO₂ substrate and is essential to further development of the TMDs-related integrated devices.

关键词: chemical vapor deposition (CVD), scanning tunneling microscope (STM), MoS₂, transport

Abstract: We report a novel two-step ambient pressure chemical vapor deposition (CVD) pathway to grow high-quality MoS₂ monolayer on the SiO₂ substrate with large crystal size up to 110 μm. The large specific surface area of the pre-synthesized MoO₃ flakes on the mica substrate compared to MoO₃ powder could dramatically reduce the consumption of the Mo source. The electronic information inferred from the four-probe scanning tunneling microscope (4P-STM) image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements. Furthermore, the direct van der Pauw transport also confirms its relatively high carrier mobility. Our study provides a reliable method to synthesize high-quality MoS₂ monolayer, which is confirmed by the direct 4P-STM measurement results. Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides (TMDs) on the SiO₂ substrate and is essential to further development of the TMDs-related integrated devices.

Key words: chemical vapor deposition (CVD), scanning tunneling microscope (STM), MoS₂, transport

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

07.79.Cz (Scanning tunneling microscopes) 73.63.-b (Electronic transport in nanoscale materials and structures)

Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧). Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition[J]. 中国物理B, 2022, 31(8): 88105-088105.

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Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition

Monolayer MoS₂ of high mobility grown on SiO₂ substrate by two-step chemical vapor deposition

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