中国物理B ›› 2022, Vol. 31 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/ac7298

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Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD

Weikang Zhao(赵伟康), Yan Teng(滕妍), Kun Tang(汤琨)†, Shunming Zhu(朱顺明), Kai Yang(杨凯), Jingjing Duan(段晶晶), Yingmeng Huang(黄颖蒙), Ziang Chen(陈子昂), Jiandong Ye(叶建东), and Shulin Gu(顾书林)‡   

  1. School of Electronic Science&Engineering, Nanjing University, Nanjing 210046, China
  • 收稿日期:2022-04-29 修回日期:2022-05-20 接受日期:2022-05-24 出版日期:2022-10-17 发布日期:2022-10-19
  • 通讯作者: Kun Tang, Shulin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • 基金资助:
    The authors acknowledged financial support from the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081) and the Fundamental Research Funds for the Central Universities, China.

Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD

Weikang Zhao(赵伟康), Yan Teng(滕妍), Kun Tang(汤琨)†, Shunming Zhu(朱顺明), Kai Yang(杨凯), Jingjing Duan(段晶晶), Yingmeng Huang(黄颖蒙), Ziang Chen(陈子昂), Jiandong Ye(叶建东), and Shulin Gu(顾书林)‡   

  1. School of Electronic Science&Engineering, Nanjing University, Nanjing 210046, China
  • Received:2022-04-29 Revised:2022-05-20 Accepted:2022-05-24 Online:2022-10-17 Published:2022-10-19
  • Contact: Kun Tang, Shulin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • Supported by:
    The authors acknowledged financial support from the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081) and the Fundamental Research Funds for the Central Universities, China.

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摘要： This work proposed to change the structure of the sample susceptor of the microwave plasma chemical vapor deposition (MPCVD) reaction chamber, that is, to introduce a small hole in the center of the susceptor to study its suppression effect on the incorporation of residual nitrogen in the MPCVD diamond film. By using COMSOL multiphysics software simulation, the plasma characteristics and the concentration of chemical reactants in the cylindrical cavity of MPCVD system were studied, including electric field intensity, electron number density, electron temperature, the concentrations of atomic hydrogen, methyl, and nitrogenous substances, etc. After introducing a small hole in the center of the molybdenum support susceptor, we found that no significant changes were found in the center area of the plasma, but the electron state in the plasma changed greatly on the surface above the susceptor. The electron number density was reduced by about 40%, while the electron temperature was reduced by about 0.02 eV, and the concentration of atomic nitrogen was decreased by about an order of magnitude. Moreover, we found that if a specific lower microwave input power is used, and a susceptor structure without the small hole is introduced, the change results similar to those in the surface area of the susceptor will be obtained, but the spatial distribution of electromagnetic field and reactant concentration will be changed.

关键词: plasma simulation, diamond, microwave plasma chemical vapor deposition (MPCVD), residual nitrogen

Abstract: This work proposed to change the structure of the sample susceptor of the microwave plasma chemical vapor deposition (MPCVD) reaction chamber, that is, to introduce a small hole in the center of the susceptor to study its suppression effect on the incorporation of residual nitrogen in the MPCVD diamond film. By using COMSOL multiphysics software simulation, the plasma characteristics and the concentration of chemical reactants in the cylindrical cavity of MPCVD system were studied, including electric field intensity, electron number density, electron temperature, the concentrations of atomic hydrogen, methyl, and nitrogenous substances, etc. After introducing a small hole in the center of the molybdenum support susceptor, we found that no significant changes were found in the center area of the plasma, but the electron state in the plasma changed greatly on the surface above the susceptor. The electron number density was reduced by about 40%, while the electron temperature was reduced by about 0.02 eV, and the concentration of atomic nitrogen was decreased by about an order of magnitude. Moreover, we found that if a specific lower microwave input power is used, and a susceptor structure without the small hole is introduced, the change results similar to those in the surface area of the susceptor will be obtained, but the spatial distribution of electromagnetic field and reactant concentration will be changed.

Key words: plasma simulation, diamond, microwave plasma chemical vapor deposition (MPCVD), residual nitrogen

中图分类号:  (Diamond)

  • 81.05.ug
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))