Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

doi:10.1088/1674-1056/19/7/076804

中国物理B ›› 2010, Vol. 19 ›› Issue (7): 76804-076804.doi: 10.1088/1674-1056/19/7/076804

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

郭希¹, 王玉田¹, 赵德刚¹, 江德生¹, 朱建军¹, 刘宗顺¹, 王辉¹, 张书明¹, 杨辉², 邱永鑫³, 徐科³

(1)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; (3)Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

出版日期:2010-07-15 发布日期:2010-07-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045 and 60836003), the National Basic Research Programme of China (Grant No. 2007CB936700) and the National Science Foundation for Distinguished Young Scholars, China (Grant No. 60925017).

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

Guo Xi (郭希)^a, Wang Yu-Tian (王玉田)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Zhu Jian-Jun (朱建军)^a, Liu Zong-Shun (刘宗顺)^a, Wang Hui (王辉)^a, Zhang Shu-Ming (张书明)^a, Qiu Yong-Xin (邱永鑫)^b, Xu Ke (徐科)^b, Yang Hui (杨辉)^ab

^a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

Online:2010-07-15 Published:2010-07-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60506001, 60776047, 60976045 and 60836003), the National Basic Research Programme of China (Grant No. 2007CB936700) and the National Science Foundation for Distinguished Young Scholars, China (Grant No. 60925017).

摘要/Abstract

摘要： This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of —0.89 GPa.

Abstract: This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x-ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence measurement of (100) reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of —0.89 GPa.

Key words: in-plane grazing incidence x-ray diffraction, gallium nitride, mosaic structure, biaxial strain

中图分类号: (Mechanical and acoustical properties)

68.60.Bs

68.55.A- (Nucleation and growth) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 62.20.D- (Elasticity) 81.40.Jj (Elasticity and anelasticity, stress-strain relations)

郭希, 王玉田, 赵德刚, 江德生, 朱建军, 刘宗顺, 王辉, 张书明, 邱永鑫, 徐科, 杨辉. Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction[J]. 中国物理B, 2010, 19(7): 76804-076804.

Guo Xi (郭希), Wang Yu-Tian (王玉田), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Wang Hui (王辉), Zhang Shu-Ming (张书明), Qiu Yong-Xin (邱永鑫), Xu Ke (徐科), Yang Hui (杨辉). Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction[J]. Chin. Phys. B, 2010, 19(7): 76804-076804.

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Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

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