Effect of film thickness on interfacial barrier of manganite-based heterojunctions

doi:10.1088/1674-1056/19/11/117306

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117306-110203.doi: 10.1088/1674-1056/19/11/117306

Effect of film thickness on interfacial barrier of manganite-based heterojunctions

孙继荣¹, 沈保根¹, 谢燕武², 郭得峰²

(1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China

收稿日期:2010-06-15 修回日期:2010-07-20 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10804094, 50832007, 50721001 and 50821001), and the Natural Science Foundation of Hebei Province, China (Grant No. A2009000339).

Effect of film thickness on interfacial barrier of manganite-based heterojunctions

Xie Yan-Wu (谢燕武)^a), Guo De-Feng (郭得峰)^a), Sun Ji-Rong(孙继荣)^b), and Shen Bao-Gen(沈保根)^b)

^a State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; ^b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2010-06-15 Revised:2010-07-20 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10804094, 50832007, 50721001 and 50821001), and the Natural Science Foundation of Hebei Province, China (Grant No. A2009000339).

摘要/Abstract

摘要： Interfacial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interfacial barrier for La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ junctions. The barrier is extracted from the forward current--voltage characteristics. Our results demonstrate that the barrier decreases gradually from ～0.85 eV to ～0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.

Abstract: Interfacial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interfacial barrier for La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ junctions. The barrier is extracted from the forward current--voltage characteristics. Our results demonstrate that the barrier decreases gradually from ～0.85 eV to ～0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.

Key words: manganite, heterojunction, thickness

中图分类号: (Thin film structure and morphology)

68.55.-a

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.50.Pz (Photoconduction and photovoltaic effects)

谢燕武, 郭得峰, 孙继荣, 沈保根. Effect of film thickness on interfacial barrier of manganite-based heterojunctions[J]. 中国物理B, 2010, 19(11): 117306-110203.

Xie Yan-Wu (谢燕武), Guo De-Feng (郭得峰), Sun Ji-Rong(孙继荣), and Shen Bao-Gen(沈保根). Effect of film thickness on interfacial barrier of manganite-based heterojunctions[J]. Chin. Phys. B, 2010, 19(11): 117306-110203.

参考文献 16

[1]	Tanaka H, Zhang J and Kawai T 2002 wxPhys. Rev. Lett.88 027204
[2]	Mitra C, Raychaudhuri P, Dorr K, Muller K H, Schulz L, Oppeneer P M and Wirth S 2003 wxPhys. Rev. Lett.90 017202
[3]	Lang P L, Zhao Y G, Yang B, Zhang X L, Li J, Wang P and Zheng D N 2005 wxAppl. Phys. Lett.87 053502
[4]	Lu H B, Dai S Y, Chen Z H, Zhou Y L, Cheng B L, Jin K J, Liu L F, Yang G Z and Ma X L 2005 wxAppl. Phys. Lett.86 032502
[5]	Xie Y W, Shen B G and Sun J R 2008 wxChin. Phys. B17 2272
[6]	Sun J R, Shen B G, Sheng Z G and Sun Y P 2004 wxAppl. Phys. Lett.85 3375
[7]	Sawa A, Fujii T, Kawasaki M and Tokura Y 2005 wxAppl. Phys. Lett.86 112508
[8]	Postma F M, Ramaneti R, Bamerjee T, Gokcan H, Hap E, Blank D H A, Jansen R and Lodder J C 2004 wxJ. Appl. Phys.95 7324
[9]	Minohara M, Ohkubo I, Kumigashira H and Oshima M 2007 wxAppl. Phys. Lett.90 132123
[10]	Lv W M, Wei A D, Sun J R, Chen Y Z and Shen B G 2009 wxAppl. Phys. Lett.94 082506
[11]	Tokura Y and Nagaosa N 2000 wxScience288 462
[12]	Sun J Z, Abraham D W, Rao R A and Eom C B 1999 wxAppl. Phys. Lett.74 3017
[13]	Xie Y W, Sun J R, Han Y N and Shen B G 2007 wxAppl. Phys. Lett.91 262515
[14]	Sze S M 1981 wxPhysics of Semiconductor Devices 2nd ed. (New York: Wiley) Chap.9
[15]	Shimizu T and Okushi H 1999 wxJ Appl. Phys.85 7244
[16]	Saifi M A and Cross L E 1970 wxPhys. Rev. B2 677

Effect of film thickness on interfacial barrier of manganite-based heterojunctions

Effect of film thickness on interfacial barrier of manganite-based heterojunctions

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Simin An(安思敏), Xingyu Gao(高兴誉), Xian Zhang(张弦), Xin Chen(陈欣), Jiawei Xian(咸家伟), Yu Liu(刘瑜), Bo Sun(孙博), Haifeng Liu(刘海风), and Haifeng Song(宋海峰). Coexisting lattice contractions and expansions with decreasing thicknesses of Cu (100) nano-films[J]. 中国物理B, 2023, 32(3): 36804-036804.
[2]	Chuang Wang(王闯), Xiao-Dong Gao(高晓冬), Di-Di Li(李迪迪), Jing-Jing Chen(陈晶晶), Jia-Fan Chen(陈家凡), Xiao-Ming Dong(董晓鸣), Xiaodan Wang(王晓丹), Jun Huang(黄俊), Xiong-Hui Zeng(曾雄辉), and Ke Xu(徐科). Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy[J]. 中国物理B, 2023, 32(2): 26802-026802.
[3]	Zhenzhen Wang(王珍珍), Weiheng Qi(戚炜恒), Jiachang Bi(毕佳畅), Xinyan Li(李欣岩), Yu Chen(陈雨), Fang Yang(杨芳), Yanwei Cao(曹彦伟), Lin Gu(谷林), Qinghua Zhang(张庆华), Huanhua Wang(王焕华), Jiandi Zhang(张坚地), Jiandong Guo(郭建东), and Xiaoran Liu(刘笑然). Anomalous strain effect in heteroepitaxial SrRuO₃ films on (111) SrTiO₃ substrates[J]. 中国物理B, 2022, 31(12): 126801-126801.
[4]	Ke He(何珂). Molecular beam epitaxy growth of quantum devices[J]. 中国物理B, 2022, 31(12): 126804-126804.
[5]	Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Selective formation of ultrathin PbSe on Ag(111)[J]. 中国物理B, 2022, 31(9): 96801-096801.
[6]	Qiong Wu(吴琼), Lei Zhao(赵雷), Xinghao Chen(陈兴豪), and Shifeng Zhao(赵世峰)^†. Efficiently enhanced energy storage performance of Ba₂Bi₄Ti₅O₁₈ film by co-doping Fe³⁺ and Ta⁵⁺ ion with larger radius[J]. 中国物理B, 2022, 31(9): 97701-097701.
[7]	Jiafan Chen(陈家凡), Jun Huang(黄俊), Didi Li(李迪迪), and Ke Xu(徐科). Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy[J]. 中国物理B, 2022, 31(7): 76802-076802.
[8]	Qiulin Liu(刘求林), Guodong Li(李国栋), Hangtian Zhu(朱航天), and Huaizhou Zhao(赵怀周). Micro thermoelectric devices: From principles to innovative applications[J]. 中国物理B, 2022, 31(4): 47204-047204.
[9]	Jin-Zi Ding(丁金姿), Wei Ren(任卫), Ai-Ling Feng(冯爱玲), Yao Wang(王垚), Hao-Sen Qiao(乔浩森), Yu-Xin Jia(贾煜欣), Shuang-Xiong Ma(马双雄), and Bo-Yu Zhang(张博宇). Synthesis of flower-like WS₂ by chemical vapor deposition[J]. 中国物理B, 2021, 30(12): 126201-126201.
[10]	Bin Liu(刘斌) and Hong Zhou(周洪). Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications[J]. 中国物理B, 2021, 30(10): 106803-106803.
[11]	Le Lei(雷乐), Feiyue Cao(曹飞跃), Shuya Xing(邢淑雅), Haoyu Dong(董皓宇), Jianfeng Guo(郭剑锋), Shangzhi Gu(顾尚志), Yanyan Geng(耿燕燕), Shuo Mi(米烁), Hanxiang Wu(吴翰翔), Fei Pang(庞斐), Rui Xu(许瑞), Wei Ji(季威), and Zhihai Cheng(程志海). Phase transition-induced superstructures of β-Sn films with atomic-scale thickness[J]. 中国物理B, 2021, 30(9): 96804-096804.
[12]	R Jayakrishnan, T R Sreerev, and Adith Varma. Water and nutrient recovery from urine: A lead up trail using nano-structured In₂S₃ photo electrodes[J]. 中国物理B, 2021, 30(5): 56103-056103.
[13]	. [J]. 中国物理B, 2021, 30(3): 36801-.
[14]	. [J]. 中国物理B, 2021, 30(2): 28504-0.
[15]	范朋, 张瑞梓, 戚竞, 李恩, 钱国健, 陈辉, 王东飞, 郑琦, 汪琴, 林晓, 张余洋, 杜世萱, Hofer W A, 高鸿钧. Epitaxial synthesis and electronic properties of monolayer Pd₂Se₃[J]. 中国物理B, 2020, 29(9): 98102-098102.