中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117307-117307.doi: 10.1088/1674-1056/19/11/117307

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Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

薛守斌, 黄如, 黄德涛, 王思浩, 谭斐, 王健, 安霞, 张兴   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2010-02-07 修回日期:2010-04-15 出版日期:2010-11-15 发布日期:2010-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grants No. 60625403, 60836004, 60925015 and 90207004), and the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701).

Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation

Xue Shou-Bin(薛守斌), Huang Ru(黄如)†, Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴)   

  1. Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2010-02-07 Revised:2010-04-15 Online:2010-11-15 Published:2010-11-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grants No. 60625403, 60836004, 60925015 and 90207004), and the Major State Basic Research Development Program of China (973 Program) (Grant No. 2006CB302701).

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摘要： This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

Abstract: This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deep-submicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductance, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co-60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed.

Key words: CMOS devices, displacement damage, heavy ion irradiation, gamma ray irradiation

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
85.30.Tv (Field effect devices)