中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107306-107306.doi: 10.1088/1674-1056/19/10/107306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
钟文武, 刘发民, 蔡鲁刚, 周传仓, 丁芃, 张嬛
Zhong Wen-Wu(钟文武), Liu Fa-Min(刘发民)†, Cai Lu-Gang(蔡鲁刚), Zhou Chuan-Cang(周传仓), Ding Peng(丁芃), and Zhang Huan(张嬛)
摘要: ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol--gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×108, 3.26×108, 5.23×108, and 6.97×108 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.
中图分类号: (Thin film structure and morphology)