中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107306-107306.doi: 10.1088/1674-1056/19/10/107306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so–gel spin coating

钟文武, 刘发民, 蔡鲁刚, 周传仓, 丁芃, 张嬛   

  1. Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China
  • 收稿日期:2010-01-11 修回日期:2010-04-13 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122), and the Equipment Research Foundation of China (Grant No. 373974).

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so–gel spin coating

Zhong Wen-Wu(钟文武), Liu Fa-Min(刘发民)†, Cai Lu-Gang(蔡鲁刚), Zhou Chuan-Cang(周传仓), Ding Peng(丁芃), and Zhang Huan(张嬛)   

  1. Department of Physics, School of Physics and Nuclear Energy Engineering, Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beijing University of Aeronautics and Astronautics, Beijing 100191, China
  • Received:2010-01-11 Revised:2010-04-13 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122), and the Equipment Research Foundation of China (Grant No. 373974).

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摘要： ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol--gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×108, 3.26×108, 5.23×108, and 6.97×108 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.

Abstract: ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol–gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×108, 3.26×108, 5.23×108, and 6.97×108 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.

Key words: ZnO thin films co-doped with Al and Sb, sol–gel spin-coating method, structure distortion, optical and electrical properties

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
73.61.Ga (II-VI semiconductors) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.Hf (II-VI semiconductors) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 81.20.Fw (Sol-gel processing, precipitation)