中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/19/10/107307

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Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

龙浩, 方浩, 齐胜利, 桑丽雯, 曹文彧, 颜建, 邓俊静, 杨志坚, 张国义   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2010-03-04 修回日期:2010-04-13 出版日期:2010-10-15 发布日期:2010-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60990314, 60976009, 60577146, U0834001) and the National Key Basic Research and Development Project (973) of China (Grant No. 2007CB307004).

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

Long Hao(龙浩), Fang Hao(方浩), Qi Sheng-Li(齐胜利), Sang Li-Wen(桑丽雯), Cao Wen-Yu(曹文彧), Yan Jian(颜建), Deng Jun-Jing(邓俊静), Yang Zhi-Jian(杨志坚)†, and Zhang Guo-Yi(张国义)   

  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
  • Received:2010-03-04 Revised:2010-04-13 Online:2010-10-15 Published:2010-10-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60990314, 60976009, 60577146, U0834001) and the National Key Basic Research and Development Project (973) of China (Grant No. 2007CB307004).

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摘要： This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

Abstract: This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

Key words: light-emitting diode, gallium nitride, degradation, V-shape pits

中图分类号:  (Electron and positron radiation effects)

  • 61.80.Fe
78.60.Hk (Cathodoluminescence, ionoluminescence) 78.66.-w (Optical properties of specific thin films) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.40.Sz (Deposition technology) 85.60.Jb (Light-emitting devices)