中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107307-107307.doi: 10.1088/1674-1056/19/10/107307
龙浩, 方浩, 齐胜利, 桑丽雯, 曹文彧, 颜建, 邓俊静, 杨志坚, 张国义
Long Hao(龙浩), Fang Hao(方浩), Qi Sheng-Li(齐胜利), Sang Li-Wen(桑丽雯), Cao Wen-Yu(曹文彧), Yan Jian(颜建), Deng Jun-Jing(邓俊静), Yang Zhi-Jian(杨志坚)†, and Zhang Guo-Yi(张国义)
摘要: This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.
中图分类号: (Electron and positron radiation effects)