中国物理B ›› 2010, Vol. 19 ›› Issue (1): 18103-018103.doi: 10.1088/1674-1056/19/1/018103

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

田雪雁, 徐征, 赵谡玲, 张福俊, 袁广才, 李婧, 孙钦军, 王赟, 徐叙瑢   

  1. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • 收稿日期:2009-04-03 修回日期:2009-07-16 出版日期:2010-01-15 发布日期:2010-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774013 and 10804006), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z412), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070004024), the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education, China (Grant No. 20070004031), the New Star Plan of Science and Technology of Beijing, China (Grant No. 2007A024) and the research grants from the Academy of Sciences for the Developing World (Grant No. B08002).

Thickness dependence of surface morphology and charge carrier mobility in organic field-effect transistors

Tian Xue-Yan(田雪雁), Xu Zheng(徐征)†, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Yuan Guang-Cai(袁广才),Li Jing(李婧), Sun Qin-Jun(孙钦军),Wang Yun(王赟), and Xu Xu-Rong(徐叙瑢)   

  1. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China
  • Received:2009-04-03 Revised:2009-07-16 Online:2010-01-15 Published:2010-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774013 and 10804006), the National High Technology Research and Development Program of China (Grant No. 2006AA03Z412), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070004024), the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education, China (Grant No. 20070004031), the New Star Plan of Science and Technology of Beijing, China (Grant No. 2007A024) and the research grants from the Academy of Sciences for the Developing World (Grant No. B08002).

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摘要： With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit.

Abstract: With the aim of understanding the relationships between organic small molecule field-effect transistors (FETs) and organic conjugated polymer FETs, we investigate the thickness dependence of surface morphology and charge carrier mobility in pentacene and regioregular poly (3-hexylthiophene) (RR-P3HT) field-effect transistors. On the basis of the results of surface morphologies and electrical properties, we presume that the charge carrier mobility is largely related to the morphology of the organic active layer. We observe that the change trends of the surface morphologies (average size and average roughness) of pentacene and RR-P3HT thin films are mutually opposite, as the thickness of the organic layer increases. Further, we demonstrate that the change trends of the field-effect mobilities of pentacene and RR-P3HT FETs are also opposite to each other, as the thickness of the organic layer increases within its limit.

Key words: organic field-effect transistors, morphology, thickness dependence, field-effect mobility

中图分类号:  (Field effect devices)

  • 85.30.Tv
68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.55.-a (Thin film structure and morphology) 73.50.Dn (Low-field transport and mobility; piezoresistance) 73.61.Ph (Polymers; organic compounds)