中国物理B ›› 2010, Vol. 19 ›› Issue (1): 18104-018104.doi: 10.1088/1674-1056/19/1/018104

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A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

吕雪芹, 金鹏, 王占国   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2009-06-24 修回日期:2009-07-12 出版日期:2010-01-15 发布日期:2010-01-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037).

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

LÜ Xue-Qin(吕雪芹), Jin Peng(金鹏)†, and Wang Zhan-Guo(王占国)   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2009-06-24 Revised:2009-07-12 Online:2010-01-15 Published:2010-01-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2006CB604904) and the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037).

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摘要： A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69~nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25~kA/cm^2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Abstract: A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm$^2$ only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Key words: quantum-dot, tunable laser, external cavity, broadband tuning

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))