中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5501-5506.doi: 10.1088/1674-1056/18/12/062

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Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates

Song Wen-Dong1, Thomas Liew2, Chong Tow Chong2, 彭英姿3   

  1. (1)Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; (2)Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608;Electrical and Computer Engineering Department, National University of Singapore, Singapore 119260; (3)Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608;Electrical and Computer Engineering Department, National University of Singapore, Singapore 119260;School of Science, Hangzhou Dianzi University, Hangzhou 310018, China
  • 收稿日期:2007-05-14 修回日期:2009-06-25 出版日期:2009-12-20 发布日期:2009-12-20

Comparative studies on Zn0.95Co0.05O thin films on C- and R-sapphire substrates

Peng Ying-Zi(彭英姿)a)b)c)†,Thomas Liew a)b),Song Wen-Donga), and Chong Tow Chong a)b)   

  1. a Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608; b Electrical and Computer Engineering Department, National University of Singapore, Singapore 119260; c School of Science, Hangzhou Dianzi University, Hangzhou 310018, China
  • Received:2007-05-14 Revised:2009-06-25 Online:2009-12-20 Published:2009-12-20

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摘要： Zn_0.95Co_0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11\bar 20) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and x-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.

Abstract: Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (11$\bar{2}$0) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and x-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure.

Key words: Co-doped ZnO thin films, diluted magnetic semiconductor, anisotropy

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.37.Lp (Transmission electron microscopy (TEM)) 75.50.Pp (Magnetic semiconductors) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 75.70.Ak (Magnetic properties of monolayers and thin films) 81.15.Fg (Pulsed laser ablation deposition)