中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5474-5478.doi: 10.1088/1674-1056/18/12/057

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Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes

宋庆文, 张玉明, 张义门, 吕红亮, 陈丰平, 郑庆立   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-03-21 修回日期:2009-05-19 出版日期:2009-12-20 发布日期:2009-12-20
  • 基金资助:
    Project supported by the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200702).

Analytical model for reverse characteristics of 4H--SiC merged PN--Schottky (MPS) diodes

Song Qing-Wen(宋庆文)†,Zhang Yu-Ming(张玉明),Zhang Yi-Men(张义门), ü Hong-Liang(吕红亮),Chen Feng-Ping(陈丰平), and Zheng Qing-Li(郑庆立)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2009-03-21 Revised:2009-05-19 Online:2009-12-20 Published:2009-12-20
  • Supported by:
    Project supported by the Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200702).

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摘要： A new analytical model for reverse characteristics of 4H--SiC merged PN--Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H--SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel--Kramers--Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (Xj) on the characteristics of 4H--SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.

Abstract: A new analytical model for reverse characteristics of 4H--SiC merged PN--Schottky diodes (MPS or JBS) is developed. To accurately calculate the reverse characteristics of the 4H--SiC MPS diode, the relationship between the electric field at the Schottky contact and the reverse bias is analytically established by solving the cylindrical Poisson equation after the channel has pinched off. The reverse current density calculated from the Wentzel--Kramers--Brillouin (WKB) theory is verified by comparing it with the experimental result, showing that they are in good agreement with each other. Moreover, the effects of P-region spacing (S) and P-junction depth (Xj) on the characteristics of 4H--SiC MPS are analysed, and are particularly useful for optimizing the design of the high voltage MPS diodes.

Key words: 4H--SiC, merged PN--Schottky, reverse characteristics, tunnelling current

中图分类号:  (Junction diodes)

  • 85.30.Kk
02.60.Lj (Ordinary and partial differential equations; boundary value problems) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.De (Semiconductor-device characterization, design, and modeling)