Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

doi:10.1088/1674-1056/18/10/061

中国物理B ›› 2009, Vol. 18 ›› Issue (10): 4470-4473.doi: 10.1088/1674-1056/18/10/061

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

乔大勇¹, 王阳元², 郭辉², 王悦湖², 张玉明², 张义门²

(1)Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 710072, China; (2)Microelectronics School, Xidian University, Xi'an 710071, China and Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

收稿日期:2009-01-13 修回日期:2009-04-07 出版日期:2009-10-20 发布日期:2009-10-20
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No J54508250120) and Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200704).

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

Guo Hui(郭辉)^a)†, Wang Yue-Hu(王悦湖)^a), Zhang Yu-Ming(张玉明)^a), Qiao Da-Yong(乔大勇)^b), and Zhang Yi-Men(张义门)^a)

^a Microelectronics School, Xidian University, Xi'an 710071, China and Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China; ^b Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xi'an 710072, China

Received:2009-01-13 Revised:2009-04-07 Online:2009-10-20 Published:2009-10-20
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No J54508250120) and Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200704).

摘要/Abstract

摘要： By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.

Abstract: By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance $\rho_{\rm c}$ as low as 4.23× 10^-5 $\Omega\cdot$cm² is achieved after annealing in N₂ at 800 °C for 3 min, which is much lower than that (>900 °C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5 k$\Omega$/$\Box$. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.

Key words: SiC, Ohmic contact, Ge ion implantation, intermediate semiconductor layer

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

61.72.up (Other materials) 73.40.Cg (Contact resistance, contact potential) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

王阳元, 郭辉, 王悦湖, 张玉明, 乔大勇, 张义门. Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation[J]. 中国物理B, 2009, 18(10): 4470-4473.

Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Zhang Yu-Ming(张玉明), Qiao Da-Yong(乔大勇), and Zhang Yi-Men(张义门). Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation[J]. Chin. Phys. B, 2009, 18(10): 4470-4473.

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Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

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