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Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas[J]. 中国物理B, 2023, 32(1): 15202-015202. |
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Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states[J]. 中国物理B, 2022, 31(8): 87804-087804. |
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Zhangyu Gu(顾张彧), Yisong Fan(范一松), Yixing Ye(叶一星), Yunyu Cai(蔡云雨), Jun Liu(刘俊), Shouliang Wu(吴守良), Pengfei Li(李鹏飞), Junhua Hu(胡俊华), Changhao Liang(梁长浩), and Yao Ma(马垚). Novel closed-cycle reaction mode for totally green production of Cu1.8Se nanoparticles based on laser-generated Se colloidal solution[J]. 中国物理B, 2022, 31(7): 78102-078102. |
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Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超). Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions[J]. 中国物理B, 2022, 31(5): 57303-057303. |
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Qi Zheng(郑琦), Rong Yang(杨蓉), Kang Wu(吴康), Xiao Lin(林晓), Shixuan Du(杜世萱), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧). Laser-induced phase conversion of n-type SnSe2 to p-type SnSe[J]. 中国物理B, 2022, 31(4): 47306-047306. |
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Xinxin Li(李欣欣), Zhen Deng(邓震), Sen Wang(王森), Jinbiao Liu(刘金彪), Jun Li(李俊), Yang Jiang(江洋), Ziguang Ma(马紫光), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation[J]. 中国物理B, 2021, 30(9): 96104-096104. |
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赵亚文, 李柳暗, 阙陶陶, 丘秋凌, 何亮, 刘振兴, 张津玮, 吴千树, 陈佳, 吴志盛, 刘扬. Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric[J]. 中国物理B, 2020, 29(6): 67203-067203. |
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吴华钦, 宋海洋, 黄玉钿, 李志芳, 吴淑莲, 章小曼, 李晖. Gastroscopy-conjugated photoacoustic and ultrasonic dual-mode imaging for detection of submucosal gastric cancer: in vitro study[J]. 中国物理B, 2020, 29(6): 64205-064205. |
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乔治, 冀建利, 张彦立, 刘虎, 李同锴. Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells[J]. 中国物理B, 2017, 26(6): 68802-068802. |
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申占伟, 张峰, 韩吉胜, 闫果果, 温正欣, 赵万顺, 王雷, 刘兴昉, 孙国胜, 曾一平. Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO[J]. 中国物理B, 2017, 26(10): 107101-107101. |
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柳红霞, 汤富领, 薛红涛, 张宇, 程育汶, 冯煜东. Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations[J]. 中国物理B, 2016, 25(12): 123101-123101. |
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汤兰凤, 于广, 陆海, 武辰飞, 钱慧敏, 周东, 张荣, 郑有炓, 黄晓明. Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress[J]. 中国物理B, 2015, 24(8): 88504-088504. |
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钱慧敏, 于广, 陆海, 武辰飞, 汤兰凤, 周东, 任芳芳, 张荣, 郑有炓, 黄晓明. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors[J]. 中国物理B, 2015, 24(7): 77307-077307. |
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汤富领, 刘冉, 薛红涛, 路文江, 冯煜东, 芮执元, 黄敏. Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations[J]. , 2014, 23(7): 77301-077301. |
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H. M. Baran, A. Tataroğlu. Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements[J]. Chin. Phys. B, 2013, 22(4): 47303-047303. |