中国物理B ›› 2008, Vol. 17 ›› Issue (5): 1817-1820.doi: 10.1088/1674-1056/17/5/044

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Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

刘世荣1, 秦朝建1, 黄伟其2, 许 丽2, 王海旭2, 金 峰2, 吴克跃2, 秦水介2   

  1. (1)Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; (2)Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China
  • 收稿日期:2007-09-21 修回日期:2008-01-29 出版日期:2008-05-20 发布日期:2008-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10764002).

Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Huang Wei-Qi(黄伟其)a)†, Xu Li(许丽)a), Wang Hai-Xu(王海旭)a), Jin Feng(金峰)a), Wu Ke-Yue(吴克跃)a), Liu Shi-Rong(刘世荣)b)‡, Qin Cao-Jian(秦朝建)b), and Qin Shui-Jie(秦水介)a)   

  1. a Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China; b Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
  • Received:2007-09-21 Revised:2008-01-29 Online:2008-05-20 Published:2008-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10764002).

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摘要： Stimulated photoluminescence (PL) emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.

关键词: interface states, stimulated emission, oxide structure of silicon, laser irradiation

Abstract: Stimulated photoluminescence (PL) emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.

Key words: interface states, stimulated emission, oxide structure of silicon, laser irradiation

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 78.45.+h (Stimulated emission)