Laser-induced phase conversion of n-type SnSe2 to p-type SnSe

doi:10.1088/1674-1056/ac4901

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47306-047306.doi: 10.1088/1674-1056/ac4901

Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe

Qi Zheng(郑琦)^1,2,†, Rong Yang(杨蓉)^1,2,4,†, Kang Wu(吴康)^1,2, Xiao Lin(林晓)^2,3, Shixuan Du(杜世萱)^1,2,3,4, Chengmin Shen(申承民)^1,2,3, Lihong Bao(鲍丽宏)^1,2,3,4,‡, and Hong-Jun Gao(高鸿钧)^1,2,3,4,§

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2021-10-25 修回日期:2022-01-06 接受日期:2022-01-07 出版日期:2022-03-16 发布日期:2022-03-25
通讯作者: Lihong Bao, Hong-Jun Gao E-mail:lhbao@iphy.ac.cn;hjgao@iphy.ac.cn
基金资助:
This work was supported by the National Key Research & Development Project of China (Grant Nos. 2016YFA0202300 and 2018FYA0305800), the National Natural Science Foundation of China (Grant No. 61888102), Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. Y201902).

Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2021-10-25 Revised:2022-01-06 Accepted:2022-01-07 Online:2022-03-16 Published:2022-03-25
Contact: Lihong Bao, Hong-Jun Gao E-mail:lhbao@iphy.ac.cn;hjgao@iphy.ac.cn
Supported by:
This work was supported by the National Key Research & Development Project of China (Grant Nos. 2016YFA0202300 and 2018FYA0305800), the National Natural Science Foundation of China (Grant No. 61888102), Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), and Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. Y201902).

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摘要/Abstract

摘要： We report a facile phase conversion method that can locally convert n-type SnSe₂ into p-type SnSe by direct laser irradiation. Raman spectra of SnSe₂ flakes before and after laser irradiation confirm the phase conversion of SnSe₂ to SnSe. By performing the laser irradiation on SnSe₂ flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe₂ and results in the phase conversion of SnSe₂ to SnSe. Lattice-revolved transmission electron microscope images of SnSe₂ flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe₂ flakes, a pattern with SnSe₂/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.

关键词: SnSe₂, SnSe, laser irradiation, local phase conversion

Abstract: We report a facile phase conversion method that can locally convert n-type SnSe₂ into p-type SnSe by direct laser irradiation. Raman spectra of SnSe₂ flakes before and after laser irradiation confirm the phase conversion of SnSe₂ to SnSe. By performing the laser irradiation on SnSe₂ flakes at different temperatures, it is found that laser heating effect induces the removal of Se atoms from SnSe₂ and results in the phase conversion of SnSe₂ to SnSe. Lattice-revolved transmission electron microscope images of SnSe₂ flakes before and after laser irradiation further confirm such conversion. By selective laser irradiation on SnSe₂ flakes, a pattern with SnSe₂/SnSe heteostructures is created. This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.

Key words: SnSe₂, SnSe, laser irradiation, local phase conversion

中图分类号: (Nanocrystalline materials)

73.63.Bd

64.70.Nd (Structural transitions in nanoscale materials) 42.55.Ye (Raman lasers) 78.30.-j (Infrared and Raman spectra)

Qi Zheng(郑琦), Rong Yang(杨蓉), Kang Wu(吴康), Xiao Lin(林晓), Shixuan Du(杜世萱), Chengmin Shen(申承民), Lihong Bao(鲍丽宏), and Hong-Jun Gao(高鸿钧). Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe[J]. 中国物理B, 2022, 31(4): 47306-047306.

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Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe

Laser-induced phase conversion of n-type SnSe₂ to p-type SnSe

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