Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

doi:10.1088/1674-1056/26/6/068802

中国物理B ›› 2017, Vol. 26 ›› Issue (6): 68802-068802.doi: 10.1088/1674-1056/26/6/068802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴)

Institue of Applied Physics, Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

收稿日期:2016-08-13 修回日期:2017-01-06 出版日期:2017-06-05 发布日期:2017-06-05
通讯作者: Zhi Qiao E-mail:xqiao77@163.com
基金资助:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA050301) and Scientific Research of Hebei Education Department, China (Grant No. QN2017135).

Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴)

Institue of Applied Physics, Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Received:2016-08-13 Revised:2017-01-06 Online:2017-06-05 Published:2017-06-05
Contact: Zhi Qiao E-mail:xqiao77@163.com
Supported by:
Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA050301) and Scientific Research of Hebei Education Department, China (Grant No. QN2017135).

摘要/Abstract

摘要： P-type silicon heterojunction (SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) SHJ solar cells was investigated systematically. It is shown that the open circuit voltage (V_oc) and fill factor (FF) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.

关键词: silicon heterojunction solar cells, interface states, band offset, front contact

Abstract: P-type silicon heterojunction (SHJ) solar cells with a-SiC:H(n) emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC:H(n)/c-Si(p) SHJ solar cells was investigated systematically. It is shown that the open circuit voltage (V_oc) and fill factor (FF) are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC:H(n)/c-Si(p) SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.

Key words: silicon heterojunction solar cells, interface states, band offset, front contact

中图分类号: (Modeling and analysis)

88.40.fc

88.40.hj (Efficiency and performance of solar cells) 88.40.jj (Silicon solar cells) 85.60.Bt (Optoelectronic device characterization, design, and modeling)

乔治, 冀建利, 张彦立, 刘虎, 李同锴. Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells[J]. 中国物理B, 2017, 26(6): 68802-068802.

Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴). Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells[J]. Chin. Phys. B, 2017, 26(6): 68802-068802.

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Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells

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