Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements

doi:10.1088/1674-1056/22/4/047303

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 47303-047303.doi: 10.1088/1674-1056/22/4/047303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements

H. M. Baran, A. Tataroğlu

Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey

收稿日期:2012-06-04 修回日期:2012-08-06 出版日期:2013-03-01 发布日期:2013-03-01

Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements

H. M. Baran, A. Tataroğlu

Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey

Received:2012-06-04 Revised:2012-08-06 Online:2013-03-01 Published:2013-03-01
Contact: A. Tataroğlu E-mail:ademt@gazi.edu.tr

摘要/Abstract

摘要： The frequency dependence of admittance measurements (capacitance-voltage (C-V) and conductance-voltage (G/ω -V)) of Au/SnO₂/n-Si (MOS) capacitors was investigated by taking into account the effects of the interface states (N_ss) and series resistance (R_s) at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz-1 MHz and (-5 V)-(+9 V), respectively. The values of N_ss and R_s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance (G_p/ω) versus log (f) curves at various voltages include a peak due to the presence of interface states. It is observed that the N_ss and their time constant (τ) range from 1.23× 10¹² eV^-1·cm^-2 to 1.47× 10¹² eV^-1·cm^-2 and from 7.29× 10^-5 s to 1.81× 10^-5 s, respectively.

关键词: MOS capacitor, admittance measurements, interface states

Abstract: The frequency dependence of admittance measurements (capacitance-voltage (C-V) and conductance-voltage (G/ω -V)) of Au/SnO₂/n-Si (MOS) capacitors was investigated by taking into account the effects of the interface states (N_ss) and series resistance (R_s) at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz-1 MHz and (-5 V)-(+9 V), respectively. The values of N_ss and R_s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance (G_p/ω) versus log (f) curves at various voltages include a peak due to the presence of interface states. It is observed that the N_ss and their time constant (τ) range from 1.23× 10¹² eV^-1·cm^-2 to 1.47× 10¹² eV^-1·cm^-2 and from 7.29× 10^-5 s to 1.81× 10^-5 s, respectively.

Key words: MOS capacitor, admittance measurements, interface states

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)) 73.20.-r (Electron states at surfaces and interfaces)

H. M. Baran, A. Tataroğlu. Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements[J]. Chin. Phys. B, 2013, 22(4): 47303-047303.

参考文献 30

[1]	Nicollian E H and Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (New York: John Wiley & Sons)
[2]	Grove A S 1967 Physics and Technology of Semiconductor Devices (New York: John Wiley & Sons)
[3]	Sze S M and Kwok K Ng 2007 Physics of Semiconductor Devices 3rd edn. (New Jersey: John Wiley & Sons)
[4]	Tataroğlu A 2011 J. Optoelectron. Adv. Mater. 13 940
[5]	Sato K and Yasamura Y 1985 J. Appl. Phys. 58 3656
[6]	Pakma O, Serin N, Serin T and Altindal Š 2008 J. Phys. D: Appl. Phys. 41 215103
[7]	Chattopadhyay P and RayChaudhuri B 1992 Solid State Electron. 35 1023
[8]	Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts 2nd edn. (Oxford: Clarendon Press)
[9]	Nicollian E H and Goetzberger A 1965 Appl. Phys. Lett. 7 216
[10]	Kelberlau U and Kassing R 1979 Solid State Electron. 22 37
[11]	Kuhn M 1970 Solid State Electron. 13 873
[12]	Tataroğlu A and Altindal ş 2008 Vacuum 82 1203
[13]	Jeon S and Park S 2011 Microelectron. Eng. 88 872
[14]	Nicollian E H and Goetzberger A 1967 Bell Syst. Tech. J. 46 1055
[15]	Szatkowski J and Sieranski K 1992 Solid State Electron. 35 1013
[16]	Altindal ş, Kanbur H, Yücedağ İ and Tataroğlu A 2008 Microelectron. Eng. 85 1495
[17]	Norde H 1979 J. Appl. Phys. 50 5052
[18]	Cheung S K and Cheung N W 1986 Appl. Phys. Lett. 49 (1986) 85
[19]	Chattopadhyay P and Daw A N 1986 Solid State Electron. 29 555
[20]	Karataş ş and Türüt A 2010 Microelectron. Reliability 50 351
[21]	Farag A A M, Cavas M and Yakuphanoglu F 2012 Mater. Chem. Phys. 132 550
[22]	Depas M, Van Meirhaeghe R L, Lafere W H and Cardon F 1994 Solid State Electron. 37 433
[23]	Altindal ş, Yücedağ İ and Tataroğlu A 2009 Vacuum 84 363
[24]	Chatterjee S, Kuo Y and Lu J 2008 Microelectron. Eng. 85 202
[25]	Aydin M E, Yakuphanoğlu F and öztuürk G 2010 Synthetic Metals 160 2186
[26]	Konofaos N, Evangelou E K, Wang Z, Kugler V and Helmersson U 2002 J. Non-Crystal Solids 303 185
[27]	Yun M, Gangopadhyay S, Bai M, Taub H, Arif M and Guha S 2007 Organic Electronics 8 591
[28]	Werner J, Ploog K and Queisser H J 1986 Phys. Rev. Lett. 57 1080
[29]	Yakuphanoğlu F 2010 Microelectron. Eng. 87 1884
[30]	Bülbül M M, Altindal ş, Parlaktürk F and Tataroğlu A 2011 Surf. Interface Anal. 43 1561

Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements

Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements

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