Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

doi:10.1088/1674-1056/24/7/077307

中国物理B ›› 2015, Vol. 24 ›› Issue (7): 77307-077307.doi: 10.1088/1674-1056/24/7/077307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

钱慧敏^{a b}, 于广^{a b}, 陆海^{a b}, 武辰飞^{a b}, 汤兰凤^{a b}, 周东^{a b}, 任芳芳^{a b}, 张荣^{a b}, 郑有炓^{a b}, 黄晓明^c

a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and Schoolof Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

收稿日期:2015-01-22 修回日期:2015-03-04 出版日期:2015-07-05 发布日期:2015-07-05
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Qian Hui-Min (钱慧敏)^{a b}, Yu Guang (于广)^{a b}, Lu Hai (陆海)^{a b}, Wu Chen-Fei (武辰飞)^{a b}, Tang Lan-Feng (汤兰凤)^{a b}, Zhou Dong (周东)^{a b}, Ren Fang-Fang (任芳芳)^{a b}, Zhang Rong (张荣)^{a b}, Zheng You-Liao (郑有炓)^{a b}, Huang Xiao-Ming (黄晓明)^c

a Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and Schoolof Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
b Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
c Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

Received:2015-01-22 Revised:2015-03-04 Online:2015-07-05 Published:2015-07-05
Contact: Lu Hai E-mail:hailu@nju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

摘要/Abstract

摘要：

The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier E_τstress= 0.72 eV for the PBS process and an average effective energy barrier E_τrecovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

关键词: amorphous indium gallium zinc oxide, thin-film transistors, positive bias stress, trapping model, interface states

Abstract:

Key words: amorphous indium gallium zinc oxide, thin-film transistors, positive bias stress, trapping model, interface states

中图分类号: (Amorphous semiconductors; glasses)

73.61.Jc

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.20.At (Surface states, band structure, electron density of states) 79.40.+z (Thermionic emission)

钱慧敏, 于广, 陆海, 武辰飞, 汤兰凤, 周东, 任芳芳, 张荣, 郑有炓, 黄晓明. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors[J]. 中国物理B, 2015, 24(7): 77307-077307.

Qian Hui-Min (钱慧敏), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Tang Lan-Feng (汤兰凤), Zhou Dong (周东), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Liao (郑有炓), Huang Xiao-Ming (黄晓明). Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors[J]. Chin. Phys. B, 2015, 24(7): 77307-077307.

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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

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