中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4635-4639.doi: 10.1088/1674-1056/17/12/050

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Research on reverse recovery characteristics of SiGeC p-i-n diodes

高勇, 刘静, 杨媛   

  1. Department of Electronic Engineering, Xi' an University of Techonlogy, Xi'an 710048, China
  • 收稿日期:2008-06-10 修回日期:2008-06-23 出版日期:2008-12-20 发布日期:2008-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50477012), the Foundation of Excellent Doctoral Dissertation of Xi'an University of Technology and the Specialized Research Fund for the Doctoral Program of Higher Education o

Research on reverse recovery characteristics of SiGeC p-i-n diodes

Gao Yong (高勇), Liu Jing (刘静), Yang Yuan (杨媛)   

  1. Department of Electronic Engineering, Xi' an University of Techonlogy, Xi'an 710048, China
  • Received:2008-06-10 Revised:2008-06-23 Online:2008-12-20 Published:2008-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50477012), the Foundation of Excellent Doctoral Dissertation of Xi'an University of Technology and the Specialized Research Fund for the Doctoral Program of Higher Education o

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摘要： This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

Abstract: This paper analyses the reverse recovery characteristics and mechanism of SiGeC p-i-n diodes. Based on the integrated systems engineering (ISE) data, the critical physical models of SiGeC diodes are proposed. Based on heterojunction band gap engineering, the softness factor increases over six times, reverse recovery time is over 30% short and there is a 20% decrease in peak reverse recovery current for SiGeC diodes with 20% of germanium and 0.5% of carbon, compared to Si diodes. Those advantages of SiGeC p-i-n diodes are more obvious at high temperature. Compared to lifetime control, SiGeC technique is more suitable for improving diode properties and the tradeoff between reverse recovery time and forward voltage drop can be easily achieved in SiGeC diodes. Furthermore, the high thermal-stability of SiGeC diodes reduces the costs of further process steps and offers more freedoms to device design.

Key words: SiGeC, softness factor, thermal-stability, lifetime control

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.De (Semiconductor-device characterization, design, and modeling) 89.20.Kk (Engineering)