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Study of (Ga, Mn)N prepared by Mn-Ion implantation using optical techniques
徐大庆, 张义门, 张玉明, 李培咸, 王超, 吕红亮, 汤晓燕, 王悦湖
2008 (12):
4648-4651.
doi: 10.1088/1674-1056/17/12/053
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This paper reports that (Ga, Mn)N is prepared using implantation of
3at.% Mn Ions into undoped GaN. Structural characterization of
the crystals was performed using x-ray diffraction(XRD). Detailed
XRD measurements have revealed the characteristic of Mn-Ion
implanted GaN with a small contribution of other compounds. With
Raman spectroscopy measurements, the spectra corresponding to the
intrinsic GaN layers demonstrate three Raman active excitations at
747, 733 and 566\,cm-1 identified as E-1(LO),
$A1(LO) and E2H, respectively. The Mn-doped GaN layers
exhibit additional excitations at 182, 288, 650--725, 363,
506cm-1 and the vicinity of $E2H mode. The modes
observed at 182, 288, 650--725\,cm-1 are assigned to
macroscopic disorder or vacancy-related defects caused by Mn-ion
implantation. Other new phonon modes are assigned to
Mnx-Ny, Gax-Mny modes and the local vibrational
mode of Mn atoms in the (Ga, Mn)N, which are in fair agreement with
the standard theoretical results.
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