中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1440-1444.doi: 10.1088/1009-1963/16/5/045

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

张磊, 邓宁, 任敏, 董浩, 陈培毅   

  1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2006-09-24 修回日期:2006-12-14 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60606021), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No~20060003067) and the Key Fundamental Research Foundation of Tsinghua U

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Zhang Lei(张磊)† , Deng Ning(邓宁), Ren Min(任敏), Dong Hao(董浩), and Chen Pei-Yi(陈培毅)   

  1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • Received:2006-09-24 Revised:2006-12-14 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60606021), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No~20060003067) and the Key Fundamental Research Foundation of Tsinghua U

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摘要： Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Abstract: Effective spin-polarized injection from magnetic semiconductor (MS) to nonmagnetic semiconductor (NMS) has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization (NESP) in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Key words: spin polarization, spin-polarized injection, magnetic semiconductor, p-n junction

中图分类号:  (Spin polarized transport in semiconductors)

  • 72.25.Dc
72.25.Mk (Spin transport through interfaces) 75.10.-b (General theory and models of magnetic ordering) 75.50.Pp (Magnetic semiconductors)