Quantum anomalous Hall effect in real materials

doi:10.1088/1674-1056/25/11/117308

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117308-117308.doi: 10.1088/1674-1056/25/11/117308

所属专题： TOPICAL REVIEW — Topological electronic states

• TOPICAL REVIEW—Topological electronic states • 上一篇下一篇

Quantum anomalous Hall effect in real materials

Jiayong Zhang(张加永), Bao Zhao(赵宝), Tong Zhou(周通), Zhongqin Yang(杨中芹)

1 State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences(MOE) & Department of Physics, Fudan University, Shanghai 200433, China;
2 Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

收稿日期:2016-02-25 修回日期:2016-05-08 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Zhongqin Yang E-mail:zyang@fudan.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB921803), the National Natural Science Foundation of China (Grant No. 11574051), the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1403400), and Fudan High-end Computing Center, China.

Quantum anomalous Hall effect in real materials

Jiayong Zhang(张加永)¹, Bao Zhao(赵宝)¹, Tong Zhou(周通)¹, Zhongqin Yang(杨中芹)^1,2

1 State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences(MOE) & Department of Physics, Fudan University, Shanghai 200433, China;
2 Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

Received:2016-02-25 Revised:2016-05-08 Online:2016-11-05 Published:2016-11-05
Contact: Zhongqin Yang E-mail:zyang@fudan.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB921803), the National Natural Science Foundation of China (Grant No. 11574051), the Natural Science Foundation of Shanghai, China (Grant No. 14ZR1403400), and Fudan High-end Computing Center, China.

摘要/Abstract

摘要：

Under a strong magnetic field, the quantum Hall (QH) effect can be observed in two-dimensional electronic gas systems. If the quantized Hall conductivity is acquired in a system without the need of an external magnetic field, then it will give rise to a new quantum state, the quantum anomalous Hall (QAH) state. The QAH state is a novel quantum state that is insulating in the bulk but exhibits unique conducting edge states topologically protected from backscattering and holds great potential for applications in low-power-consumption electronics. The realization of the QAH effect in real materials is of great significance. In this paper, we systematically review the theoretical proposals that have been brought forward to realize the QAH effect in various real material systems or structures, including magnetically doped topological insulators, graphene-based systems, silicene-based systems, two-dimensional organometallic frameworks, quantum wells, and functionalized Sb(111) monolayers, etc. Our paper can help our readers to quickly grasp the recent developments in this field.

关键词: quantum anomalous Hall effect, topological insulator, ferromagnetic insulator, two-dimensional material

Abstract:

Key words: quantum anomalous Hall effect, topological insulator, ferromagnetic insulator, two-dimensional material

中图分类号: (Quantum Hall effects)

73.43.-f

71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) 73.22.-f (Electronic structure of nanoscale materials and related systems) 72.25.Dc (Spin polarized transport in semiconductors)

张加永, 赵宝, 周通, 杨中芹. Quantum anomalous Hall effect in real materials[J]. 中国物理B, 2016, 25(11): 117308-117308.

Jiayong Zhang(张加永), Bao Zhao(赵宝), Tong Zhou(周通), Zhongqin Yang(杨中芹). Quantum anomalous Hall effect in real materials[J]. Chin. Phys. B, 2016, 25(11): 117308-117308.

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Quantum anomalous Hall effect in real materials

Quantum anomalous Hall effect in real materials

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