Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

doi:10.1088/1674-1056/28/5/057201

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 57201-057201.doi: 10.1088/1674-1056/28/5/057201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China

收稿日期:2018-12-16 修回日期:2019-01-24 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Liang-Bin Hu E-mail:lbhu26@126.com

Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China

Received:2018-12-16 Revised:2019-01-24 Online:2019-05-05 Published:2019-05-05
Contact: Liang-Bin Hu E-mail:lbhu26@126.com

摘要/Abstract

摘要：

We consider the effects of interface bound states on the electrical shot noise in tunnel junctions formed between normal metals and one-dimensional (1D) or two-dimensional (2D) Rashba semiconductors with proximity-induced s-wave pairing potential. We investigate how the shot noise properties vary as the interface bound state is evolved from a non-zero energy bound state to a zero-energy bound state. We show that in both 1D and 2D tunnel junctions, the ratio of the noise power to the charge current in the vicinity of zero bias voltage may be enhanced significantly due to the induction of the midgap interface bound state. But as the interface bound state evolves from a non-zero energy bound state to a zero-energy bound state, this ratio tends to vanish completely at zero bias voltage in 1D tunnel junctions, while in 2D tunnel junctions it decreases smoothly to the usual classical Schottky value for the normal state. Some other important aspects of the shot noise properties in such tunnel junctions are also clarified.

关键词: interface bound state, tunnel junction, shot noise

Abstract:

Key words: interface bound state, tunnel junction, shot noise

中图分类号: (General formulation of transport theory)

72.10.Bg

72.25.Dc (Spin polarized transport in semiconductors) 72.25.Ba (Spin polarized transport in metals) 72.15.-v (Electronic conduction in metals and alloys)

陈文祥, 王瑞强, 胡梁宾. Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential[J]. 中国物理B, 2019, 28(5): 57201-057201.

Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾). Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential[J]. Chin. Phys. B, 2019, 28(5): 57201-057201.

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Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

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