中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/27/6/067203
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction
Lin Zhang(张林)
- 1 Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China;
2 Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, China
Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction
Lin Zhang(张林)1,2
- 1 Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China;
2 Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, China
摘要： We propose two possible spin valves based on a zigzag silicene nanoribbon (ZSR) ferromagnetic junction. By using the Landauer-Bütikker formula, we calculate the spin-resolved conductance spectrum of the system and find that the spin transport is crucially dependent on the band structure of the ZSR tuned by a perpendicular electric field. When the ZSR is in the topological insulator phase under a zero electric field, the low-energy spin transport and its ON and OFF states in the tunneling junction mainly rely on the valley valve effect and the edge state of the energy band, which can be electrically modulated by the Fermi level, the spin-orbit coupling, and the local magnetization. When a nonzero perpendicular electric field is applied, the ZSR is a band insulator with a finite energy gap, the spin switch phenomenon is still preserved in the device and it does not come from the valley valve effect, but from the energy gap opened by the perpendicular electric field. The proposed device might be designed as electrical tunable spin valves to manipulate the spin degree of freedom of electrons in silicene.
中图分类号: (Spin polarized transport in semiconductors)
- 72.25.Dc