中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47201-047201.doi: 10.1088/1674-1056/27/4/047201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Lian Liu(刘恋), Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)   

  1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2017-10-22 修回日期:2018-01-14 出版日期:2018-04-05 发布日期:2018-04-05
  • 通讯作者: Liang-Bin Hu E-mail:lbhu26@126.com

Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Lian Liu(刘恋), Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)   

  1. Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631, China
  • Received:2017-10-22 Revised:2018-01-14 Online:2018-04-05 Published:2018-04-05
  • Contact: Liang-Bin Hu E-mail:lbhu26@126.com

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摘要： Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically. It is shown that the Rashba spin-orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier's Fermi wavelength. When there are more than one domain wall presented in a magnetic semiconductor nanowire, not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport, and in such cases the influences of the Rashba spin-orbit coupling will depend sensitively both on the domain walls' width and the domain walls' separation.

关键词: magnetic semiconductor nanowires, domain wall, spin-orbit coupling, spin-polarized electronic transport

Abstract: Influence of spin-orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically. It is shown that the Rashba spin-orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier's Fermi wavelength. When there are more than one domain wall presented in a magnetic semiconductor nanowire, not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport, and in such cases the influences of the Rashba spin-orbit coupling will depend sensitively both on the domain walls' width and the domain walls' separation.

Key words: magnetic semiconductor nanowires, domain wall, spin-orbit coupling, spin-polarized electronic transport

中图分类号:  (General formulation of transport theory)

  • 72.10.Bg
72.25.Dc (Spin polarized transport in semiconductors) 72.25.Ba (Spin polarized transport in metals) 72.15.-v (Electronic conduction in metals and alloys)