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Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers
韩培高, 马忠元, 夏正月, 陈德媛, 徐骏, 钱波, 陈三, 李伟, 黄信凡, 陈坤基, 冯端
2007 (5):
1410-1416.
doi: 10.1088/1009-1963/16/5/040
摘要
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Enhanced photoluminescence (PL) at room temperature from thermally
annealed a-Si\jz{.2mm}{:}H/SiO2 multilayers is observed through
the step-by-step thermal post-treatment. The correlation between the
PL and the crystallization process is studied using
temperature-dependent PL, Raman, cross section high-resolution
transmission electron microscopy (X-HRTEM) and x-ray diffraction
(XRD) techniques. An intensified PL band around 820nm is
discovered from the sample annealed near the crystallization onset
temperature, which is composed of two peaks centred at 773nm and
863nm, respectively. It is found that the PL band centred at
863nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and
the PL band centred at 773nm is attributed to Si = O bonds
stabilized in the p-nc-Si surface.
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