Generation of valley pump currents in silicene

doi:10.1088/1674-1056/28/1/017204

摘要/Abstract

摘要：

We propose a workable scheme for generating a bulk valley pump current in a silicene-based device which consists of two pumping regions characterized by time-dependent strain and staggered potentials, respectively. In a one-dimension model, we show that a pure valley current can be generated, in which the two valley currents have the same magnitude but flow in opposite directions. Besides, the pumped valley current is quantized and maximized when the Fermi energy of the system locates in the bandgap opened by the two pumping potentials. Furthermore, the valley current can be finely controlled by tuning the device parameters. Our results are useful for the development of valleytronic devices based on two-dimensional materials.

关键词: valley currents, charge pump, quantization, silicene

Abstract:

Key words: valley currents, charge pump, quantization, silicene

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

72.80.Vp (Electronic transport in graphene) 73.20.At (Surface states, band structure, electron density of states) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

John Tombe Jada Marcellino, 王美娟, 汪萨克. Generation of valley pump currents in silicene[J]. 中国物理B, 2019, 28(1): 17204-017204.

John Tombe Jada Marcellino, Mei-Juan Wang(王美娟), Sa-Ke Wang(汪萨克). Generation of valley pump currents in silicene[J]. Chin. Phys. B, 2019, 28(1): 17204-017204.

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