Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

doi:10.1088/1674-1056/abeb09

中国物理B ›› 2022, Vol. 31 ›› Issue (1): 17201-017201.doi: 10.1088/1674-1056/abeb09

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Sai-Yan Chen(陈赛艳)^†, Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽)

College of Science, Guilin University of Technology, Guilin 541004, China

收稿日期:2021-01-17 修回日期:2021-02-18 接受日期:2021-03-02 出版日期:2021-12-03 发布日期:2021-12-18
通讯作者: Sai-Yan Chen E-mail:6615049@glut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11864009).

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Sai-Yan Chen(陈赛艳)^†, Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽)

College of Science, Guilin University of Technology, Guilin 541004, China

Received:2021-01-17 Revised:2021-02-18 Accepted:2021-03-02 Online:2021-12-03 Published:2021-12-18
Contact: Sai-Yan Chen E-mail:6615049@glut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11864009).

摘要/Abstract

摘要： The dwell time and spin polarization (SP) of electrons tunneling through a parallel double δ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work. This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/Al_xIn_1-xAs heterostructure, respectively. An evident SP effect remains after a bias voltage is applied to the nanostructure. Moreover, both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage, which may result in an electrically-tunable temporal spin splitter for spintronics device applications.

关键词: parallel double δ-magnetic-barrier nanostructure, bias, dwell time, spin polarization, temporal spin splitter

Abstract: The dwell time and spin polarization (SP) of electrons tunneling through a parallel double δ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work. This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/Al_xIn_1-xAs heterostructure, respectively. An evident SP effect remains after a bias voltage is applied to the nanostructure. Moreover, both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage, which may result in an electrically-tunable temporal spin splitter for spintronics device applications.

Key words: parallel double δ-magnetic-barrier nanostructure, bias, dwell time, spin polarization, temporal spin splitter

中图分类号: (Spin polarized transport in semiconductors)

72.25.Dc

72.25.-b (Spin polarized transport) 72.25.Hg (Electrical injection of spin polarized carriers) 85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)

Sai-Yan Chen(陈赛艳), Mao-Wang Lu(卢卯旺), and Xue-Li Cao(曹雪丽). Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias[J]. 中国物理B, 2022, 31(1): 17201-017201.

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Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias

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