中国物理B ›› 2004, Vol. 13 ›› Issue (11): 1815-1819.doi: 10.1088/1009-1963/13/11/008

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Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

童建农1, 沈绪榜1, 邹雪城2   

  1. (1)Centre for IC Design, Institute of Pattern Recognition and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan 430074, China; (2)Centre for IC Design, Institute of Pattern Recognition and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan 430074, China; Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2004-03-15 修回日期:2004-06-25 出版日期:2004-11-20 发布日期:2005-06-20

Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

Tong Jian-Nong (童建农)a, Zou Xue-Cheng (邹雪城)ab, Shen Xu-Bang (沈绪榜)a   

  1. a Centre for IC Design, Institute of Pattern Recognition and Artificial Intelligence, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2004-03-15 Revised:2004-06-25 Online:2004-11-20 Published:2005-06-20

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摘要： This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.

关键词: grooved-gate MOSFET, threshold voltage, short channel effect, junction depth

Abstract: This paper presents the influences of structural parameters on the immunity of short-channel effects in grooved-gate n-channel metal－oxide－semiconductor field effect transistor (nMOSFET) using the simulator PISCES-II. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.

Key words: grooved-gate MOSFET, threshold voltage, short channel effect, junction depth

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.40.Ry (Impurity doping, diffusion and ion implantation technology)