中国物理B ›› 1996, Vol. 5 ›› Issue (5): 370-376.doi: 10.1088/1004-423X/5/5/007

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STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe

郭世平, 张家明, 刘普霖, 沈学础, 袁诗鑫   

  1. Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, China
  • 收稿日期:1994-12-09 修回日期:1995-12-01 出版日期:1996-05-20 发布日期:1996-05-20

STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe

GUO SHI-PING (郭世平)a, ZHANG JIA-MING (张家明)a, LIU PU-LIN (刘普霖)a, SHEN XUE-CHU (沈学础)a, YUAN SHI-XIN (袁诗鑫)a, J.W. TOMMb   

  1. a Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083, Chinab Humboldt-Universit$\ddot{\rm a}$t zu Berlin, Institut f$\ddot{\rm u}$r Physik, Invalidenstrasse 110, D-10115 Berlin, Germany
  • Received:1994-12-09 Revised:1995-12-01 Online:1996-05-20 Published:1996-05-20

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摘要： HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied.

Abstract: HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied.

中图分类号:  (Molecular, atomic, ion, and chemical beam epitaxy)

  • 81.15.Hi
68.55.A- (Nucleation and growth) 61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)) 78.30.Fs (III-V and II-VI semiconductors) 78.55.Et (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)