Chinese Physics B
Graphene resistive random memory–the promising memory device in next generation
Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令)
Chin. Phys. B . 2017, (3): 38501 -038501 .  DOI: 10.1088/1674-1056/26/3/038501

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