Abstract We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell's performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.
Received: 03 November 2007
Revised: 16 February 2008
Accepted manuscript online:
PACS:
84.30.Sk
(Pulse and digital circuits)
Cite this article:
Song Yun-Cheng(宋云成), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦) Carriers recombination processes in charge trapping memory cell by simulation 2008 Chin. Phys. B 17 2678
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