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Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography |
| Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences |
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Abstract Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based LEDs have been fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres (PS) are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power has been enhanced by as much as 40.5% and 61% over as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties has been found due to the SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power of all, there was not involved any dry etching at all that would introduce etching damage. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricationg PhC LEDs. Furthermore, the FDTD simulation was also performed to further reveal the emission characteristics of LEDs with PhC structures.
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Received: 29 August 2013
Revised: 22 September 2013
Published: 31 October 2013
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Cite this article:
Large-scale SiO2 Photonic Crystal for High Efficiency GaN LEDs by Nanospherical-lens Lithography Chin. Phys. B 0
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