Please wait a minute...
Chin. Phys. B, 2018, Vol. 27(8): 088502    DOI: 10.1088/1674-1056/27/8/088502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

Hui Li(李慧), Chang-Chun Chai(柴常春), Yu-Qian Liu(刘彧千), Han Wu(吴涵), Yin-Tang Yang(杨银堂)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, China
Abstract  A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves (HPM) is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.
Keywords:  monolithic composite transistor      high-power microwaves      damage effects      pulse-width effects  
Received:  26 March 2018      Revised:  14 May 2018      Published:  05 August 2018
PACS:  85.30.Pq (Bipolar transistors)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Corresponding Authors:  Hui Li     E-mail:  huili_xidian@163.com

Cite this article: 

Hui Li(李慧), Chang-Chun Chai(柴常春), Yu-Qian Liu(刘彧千), Han Wu(吴涵), Yin-Tang Yang(杨银堂) Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves 2018 Chin. Phys. B 27 088502

[1] Meng F B 2011 High-power EM pulse technology (Beijing: National Defense Industry Press) pp. 90-94
[2] Kyechong K and Iliadis A A 2007 IEEE Trans. Electromagn. Compat. 49 329
[3] Kim K and Iliadis A A 2008 Solid-State Electron. 52 1589
[4] Liu Y, Chai C C and Yang Y T 2016 Chin. Phys. B 25 048504
[5] Zhang Y H, Chai C C and Yu X H 2017 Chin. Phys. B 26 028501
[6] Kyechong K and Iliadis A A 2010 Solid-State Electron. 54 18
[7] Fan J P, Zhang L and Jia X Z 2010 High-power Laser Part. Beams 22 1319
[8] Liu Y, Chai C C and Yu X H 2016 Acta Phys. Sin. 65 038402 (in Chinese)
[9] Xu X B, Zhang B and Yang Y T 2013 Chin. Phys. Lett. 30 028502
[10] Liu H T, Yang B H and Lv H B 2015 Chin. Phys. Lett. 32 028502
[11] Zhai Y H, Li P and Zhang G J 2011 Acta Phys. Sin. 60 088501 (in Chinese)
[12] Li P, Liu M H and He C H 2017 Chin. Phys. B 26 088503
[13] Zhou H A, Du Z W and Gong K 2005 High-power Laser Part. Beams 17 1861
[14] Wang L P, Zhou D F and Hu T 2017 Ship Electronic Engineering 37 135
[15] Ma Z Y, Chai C C and Ren X R 2012 Acta Phys. Sin. 61 078501 (in Chinese)
[16] Fang J P, You H L and Jia X Z 2014 J. Xidian Univ. 41 92
[17] Chen X, Du Z W and Gong K 2007 High-power Laser Part. Beams 19 449
[18] Ren X R, Chai C C and Ma Z Y 2013 Acta Phys. Sin. 62 068501 (in Chinese)
[19] Zhang C B, Zhang J D and Wang H G 2015 J. Natl. Univ. Def. Technol. 37 1
[20] Chai C C, Yang Y T and Zhang B 2008 J. Semicond. 29 2403
[21] Chai C C, Yang Y T and Zhang B 2008 IEEE. International Conference on Solid-State and Integrated-Circuit Technology 1528
[22] Chai C C, Zhang B and Ren X R 2010 J. Xidian Univ. 37 898
[23] Ghandi R, Buono B and Domeij M 2011 IEEE Electron Dev. Lett. 32 188
[24] Zhang Q C, Jonas C O and Loughlin M 2009 IEEE Electron Dev. Lett. 30 2
[25] Luo Y B, Zhang J H and Peter A 2004 IEEE Trans. Electron Dev. 51 12
[26] Integrated Systems Engineering A G 2004 ISE-TCAD Dessis Simulation User's Manual, Zurich, Switzerland, p. 142
[27] Wunsch D C and Bell R R 1968 IEEE Trans. Nucl. Sci. 15 244
[28] Tasca D M 1970 IEEE Trans. Nucl. Sci. 17 364
[1] Investigation of an X-band magnetically insulated transmission line oscillator
Fan Yu-Wei, Zhong Hui-Huang, Li Zhi-Qiang, Shu Ting, Yang Han-Wu, Yang Jian-Hua, Wang Yong, Luo Ling, Zhao Yan-Song. Chin. Phys. B, 2008, 17(5): 1804-1808.
No Suggested Reading articles found!