Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

doi:10.1088/1674-1056/25/12/128501

Abstract

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Keywords: electrostatic discharge (ESD) diode-triggered silicon controlled rectifier (DTSCR) transmission-line-pulsing (TLP) mathematical modeling

Received: 10 June 2016
Revised: 12 July 2016
Published: 05 December 2016

PACS:	85.30.Kk	(Junction diodes)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	41.20.Cv	(Electrostatics; Poisson and Laplace equations, boundary-value problems)
	52.35.Fp	(Electrostatic waves and oscillations (e.g., ion-acoustic waves))

Fund:

Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

Corresponding Authors: Yuan Wang
E-mail: wangyuan@pku.edu.cn

Cite this article:

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 2016 Chin. Phys. B 25 128501

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