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Chin. Phys. B, 2016, Vol. 25(12): 128501    DOI: 10.1088/1674-1056/25/12/128501

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬)
Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Keywords:  electrostatic discharge (ESD)      diode-triggered silicon controlled rectifier (DTSCR)      transmission-line-pulsing (TLP)      mathematical modeling  
Received:  10 June 2016      Revised:  12 July 2016      Published:  05 December 2016
PACS:  85.30.Kk (Junction diodes)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  41.20.Cv (Electrostatics; Poisson and Laplace equations, boundary-value problems)  
  52.35.Fp (Electrostatic waves and oscillations (e.g., ion-acoustic waves))  

Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

Corresponding Authors:  Yuan Wang     E-mail:

Cite this article: 

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 2016 Chin. Phys. B 25 128501

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