INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress |
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) |
Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
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Received: 10 June 2016
Revised: 12 July 2016
Published: 05 December 2016
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PACS:
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85.30.Kk
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(Junction diodes)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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41.20.Cv
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(Electrostatics; Poisson and Laplace equations, boundary-value problems)
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52.35.Fp
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(Electrostatic waves and oscillations (e.g., ion-acoustic waves))
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Fund: Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002). |
Corresponding Authors:
Yuan Wang
E-mail: wangyuan@pku.edu.cn
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Cite this article:
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 2016 Chin. Phys. B 25 128501
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